Atomic Layer Epitaxy of ZnS by Low-Pressure Horizontal Metalorganic Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• The self-limiting growth in atomic layer epitaxy (ALE) of ZnS on (100)-GaAs substrate was investigated using a horizontal low-pressure metalorganic chemical vapor deposition (MOCVD) system. The growth rate per cycle was kept constant at one monolayer, independent of the substrate temperature which was in the range of 125° C to 200° C. Under optimal growth conditions, ZnS layers grown in the ALE mode showed good surface morphology. Photoluminescence (PL) showed three peaks; a near-band-edge emission at 349 nm, a self-activated emission at 434 nm and a broad one at around 500 and 600 nm, which is considered to be due to relaxation through dislocation formation.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1996-05-15

著者

• Su Yan

  Department Of Electrical Engineering National Cheng Kung University

• Yokoyama Meiso

  Department Of Electrical Engineering National Cheng Kung University

• LIU Chun

  Department of Electrical Engineering, National Cheng Kung University

• Liu Chun

  Department of Electrical Engineering, National Cheng Kung University,

• Yokoyama Meiso

  Department of Electrical Engineering, National Cheng Kung University,

• Lee Nien

  Department of Electrical Engineering, National Cheng Kung University,

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