Effect of Atomic Layer Epitaxy Growth Conditions on the Properties of ZnS Epilayers on (100)-Si Substrate
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概要
- 論文の詳細を見る
ZnS films have been grown on (100)-Si substrate in atomic layer epitaxy (ALE) mode using DMZn and H_2S as source materials. The growth rate was 0.7 monolayer per cycle, independent of substrate temperature in the range 125℃ to 225℃. Under optimum growth conditions, ZnS layers grown in ALE mode showed good surface morphology. In photoluminescence (PL) spectra, a sharp peak at 337 nm was observed at room temperature, which was attributed to band-to-band emission.
- 社団法人応用物理学会の論文
- 1996-10-15
著者
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Yokoyama Meiso
Department of Electrical Engineering, National Cheng Kung University
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Su Yan
Department Of Electrical Engineering National Cheng Kung University
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LIU Chun
Department of Environmental Chemistry and Engineering, Interdisciplinary Graduate School of Science
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Liu C
Nan‐jeon Inst. Technol. Yan‐hsui Twn
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Yokoyama Meiso
Department Of Electrical Engineering National Cheng Kung University
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Liu Chun
Department Of Electronic Engineering Nan-jeon Institute Of Technology Yan-hsui
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