Variety Transformation of Compound at GaSb Surface under Sulfur Passivation
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概要
- 論文の詳細を見る
An elemental Sb layer, formed at the oxide/GaSb interface, causes large surface leakage current and recombination, which are two main drawbacks of GaSb-based devices in full photoelectric application. The proportion of elemental Sb to other Sb compounds at the GaSb surface was increased by immersing the sample into diluted HCl solution. With sulfuring of the GaSb surface, elemental Sb was replaced by Sb_2S_5 and Sb oxides were removed. The mechanism that prevents formation of the leakage path at the as-etched GaSb surface is elucidated by X-ray photoelectron spectroscopy (XPS).
- 社団法人応用物理学会の論文
- 1998-12-15
著者
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Su Yan
Department Of Electrical Engineering National Cheng Kung University
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Li Wen
Department Of Pharmaceutical Sciences School Of Pharmacy University Of Southern California
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LIN Chuing
Department of Electrical Engineering, National Cheng Kung University
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SE Than
Department of Electrical Engineering, National Cheng Kung University
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Se Than
Department Of Electrical Engineering National Cheng Kung University
-
Lin Chuing
Department Of Electrical Engineering National Cheng Kung University
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Li Wen
Department Of Electrical Engineering Far East College
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LI Wen
Department of Clinical Pharmacology, China Medical University
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