The Current-Voltage Characteristics of a Delta-Doped Triple-Barrier Switch

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1992-01-15

著者

• Su Yan

  Department Of Electrical Engineering National Cheng Kung University

• Su Ching

  Department Of Electrical Engineering National Cheng Kung University

• Wang R

  Department Of Electrical Engineering National Cheng Kung University

• WANG Ruey

  Department of Electrical Engineering, National Cheng Kung University

• TSAI Hann

  Department of Electrical Engineering, National Cheng Kung University

• Tsai Hann

  Department Of Electrical Engineering National Cheng Kung University

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• Effects of [H_2S]/[DMZn] Molar Ratio on ZnS Films Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• High Dielectric Constant of RF-Sputtered HfO_2 Thin Films
• The Current-Voltage Characteristics of a Delta-Doped Triple-Barrier Switch
• The Study of GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals
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• Effect of Atomic Layer Epitaxy Growth Conditions on the Properties of ZnS Epilayers on (100)-Si Substrate
• The Variation of In_xGa_Sb Solid Compositions with the Vapor Phase Mole Fractions at Different Growth Pressures in Metal Organic Chemical Vapor Deposition
• Negative Differntial Resistance in GaAs Delta-Doping Tunneling Diodes
• Investigation of the Influence of In_Ga_As Relaxed Layer InAs/In_Ga_As/GaAs Double Quantum Well Resonant Interband Tunneling Structure
• Atomic Layer Epitaxy of ZnS by Low-Pressure Horizontal Metalorganic Chemical Vapor Deposition
• Variety Transformation of Compound at GaSb Surface under Sulfur Passivation
• Atomic Layer Epitaxy of ZnS by Low-Pressure Horizontal Metalorganic Chemical Vapor Deposition

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