Ohmic Contacts of AuGeNi and Ag/AuGeNi to n-GaSb with Various Sintering Temperatures
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概要
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The ohmic contact properties of Ag/AuGeNi/n-GaSb and AuGeNi/n-GaSb systems were investigated in this paper by measuring the barrier height and specific contact resistance with various sintering temperatures. The lowest specific contact resistance was about 8×10^<-3>-8×10^<-4>Ω・cm^2 for the Ag/AuGeNi/n-GaSb contact system when the sintering temperature was 400℃ for 2 min. This is better than that of the AuGeNi/n-GaSb contact system. Rutherford backscattering spectroscopy (RBS) was also used to study the interface between Ag/AuGeNi and GaSb during heat treatment. The Au peak in RBS spectra disappeared and the spectra became smooth when the ohmic contact was formed.
- 社団法人応用物理学会の論文
- 1991-05-15
著者
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Su Yan
Department Of Electrical Engineering National Cheng Kung University
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Juang Fuh
Department Of Electro-optics Engineering National Huwei Institute Of Technology
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Juang Fuh
Department Of Electrical Engineering National Cheng Kung University
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GAN Kuang
Department of Electrical Engineering, National Cheng Kung University
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Gan Kuang
Department Of Electrical Engineering National Cheng Kung University
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