The Variation of In_xGa_<1-x>Sb Solid Compositions with the Vapor Phase Mole Fractions at Different Growth Pressures in Metal Organic Chemical Vapor Deposition

概要

論文の詳細を見る
In_xGa_<1-x>Sb epitaxial layers have been grown on (100) GaSb substrates at 600℃ under different growth pressures of 100 and 170 Torr. From both analyses of X-ray diffraction and photoluminescence (PL), the variation of indium solid composition (X_s) with vapor phase composition (X_v) for both 100 and 170 Tort growths were studied. The distribution coefficient (the ratio X_s to X_v) is found to be smaller than unity. The result is similar to but slightly higher than those reported by Bougnot et al. The In solid compositions grown at 170 Torr were found to be higher than those grown at 100 Torr. The energy gaps of In_xGa_<1-x>Sb epilayers were deduced from photoluminescent peaks (10 K). The relationship between energy gap (10 K) and indium solid composition for different growth pressures of 100 and l70 Torr was studied and compared with the numerical results reported by Auvergne et al. The photoluminescence peak intensity was found to decrease quickly with increasing lattice mismatch between In_xGa_<1-x>Sb epilayers and GaSb substrates.
社団法人応用物理学会の論文
1991-08-15