The δ-Doped In_<0.25>Ga_<0.75>As/GaAs Pseudomorphic High Electron Mobility Transistor Structures Prepared by Low-Pressure Metal Organic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-06-15
著者
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Wang C
Department Of Electrical And Electronic Engineering Kanazawa University
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Chang C
National Nano Device Laboratory
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Wang C.
Departments Of Cytokine Biology Forsyth Dental Center
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Wang C.
Department Of Mathematics And Medhanical Engineering Michigan State University
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Wu T
National Cheng Kung Univ. Tainan Twn
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CHANG C.Y.
Institute o Electronics, National Chiao Tung University
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LIN W.
Department of Electrical Engineering, National Cheng Kung University
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HSU W.C.
Department of Electrical Engineering, National Cheng Kung University
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WU T.S.
Department of Electrical Engineering, National Cheng Kung University
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CHANG S.Z.
Department of Electrical Engineering, National Cheng Kung University
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Hsu W
National Cheng Kung Univ. Tainan Twn
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Chang C
Taipei Medical Univ. Taipei Jpn
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Chang S.z.
Department Of Electrical Engineering National Cheng Kung University
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Wang C.
Department Of Civil Engineering National United University
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Lin W.
Department Of Electrical And Computer Engineering National University Of Singapore
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Wang C.
Department Of Chemistry Tamkang University
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Lin W
Gsj
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