High Performance Double Delta Doping GaAs/In_<0.25>Ga_<0.75>As/GaAs Pseudomorphic Heterostructure

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概要

• 論文の詳細を見る

• We report the preparation of high two-dimensional electron gas (2DEG) concentration and mobility in double delta doping, single quantum well GaAs/In_<0.25>Ga_<0.75>As/GaAs pseudomorphic heterostructure by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Superior in gate voltage swing (3 V), saturation current density, and extrinsic transconductance to those of conventional In_xGa_<1-x5>As/GaAs pseudomorphic heterostructures with similar gate length (2μm) ever reported, were achieved.

• 社団法人応用物理学会の論文
• 1993-03-01

著者

• HSU W.C.

  Department of Electrical Engineering, National Cheng Kung University

• WU T.S.

  Department of Electrical Engineering, National Cheng Kung University

• WU C.L.

  Department of Electrical Engineering, National Cheng Kung University

• SHIEH H.M.

  Department of Electrical Engineering, National Cheng Kung University

関連論文

• The δ-Doped In_Ga_As/GaAs Pseudomorphic High Electron Mobility Transistor Structures Prepared by Low-Pressure Metal Organic Chemical Vapor Deposition
• Dynamic Response of a Spinning Timoshenko Beam with General Boundary Conditions under a Moving Skew Force Using Global Assumed Mode Method
• High Performance Double Delta Doping GaAs/In_Ga_As/GaAs Pseudomorphic Heterostructure

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