Dynamic Response of a Spinning Timoshenko Beam with General Boundary Conditions under a Moving Skew Force Using Global Assumed Mode Method

スポンサーリンク

概要

• 論文の詳細を見る

• In this study the global assumed mode method (GAMM) is used to analyze the dynamic behavior of a spinning Timoshenko beam subjected to a moving skew force with general boundary conditions. The moving skew force is usually caused by the frictional effect or the weight of the components. Considering three general geometric boundaries, i.e. hinged-hinged, clamped-clamped, and clamped-hinged, the system equations of motion are derived by the Lagrangian approach combining with the GAMM. The transient response of the system due to a moving skew force is evaluated by the Runge-Kutta method. The numerical results show that the lateral deflections due to the skew force for the hinged-hinged boundary case are smaller than those in the case of a clamped-clamped or clamped-hinged boundary. And the axial deflections due to the skew force are larger in the case of a hinged-hinged boundary.

• 一般社団法人日本機械学会の論文
• 2006-06-15

著者

• HSU W.C.

  Department of Electrical Engineering, National Cheng Kung University

• Hsu W.c.

  Department Of Mechanical Engineering Wufeng Institute Of Technology

• Huang K.

  Department Of Electrophysics National Chiao Tung University

• SHIAU T.N.

  Department of Mechanical Engineering, National Chung Cheng University

• CHEN E.C.

  Hiwin Technologies Corp.

• HUANG K.H.

  Department of Mechanical Engineering, National Chung Cheng University

• Shiau T.n.

  Department Of Mechanical Engineering National Chung Cheng University

• Huang K.h.

  Department Of Mechanical Engineering National Chung Cheng University

• Shiau T.

  Department of Mechanical Engineering, National Chung Cheng University

• Chen E.

  Hiwin Technologies Corp.

関連論文

• The δ-Doped In_Ga_As/GaAs Pseudomorphic High Electron Mobility Transistor Structures Prepared by Low-Pressure Metal Organic Chemical Vapor Deposition
• Infrared Spectroscopic Study of Mercury-Sensitized Photo-CVD Silicon Oxide
• High Breakdown P-Channel InSb MOSFET
• Anomalous Diffusion of Cd in InSb
• InSb P-N Junction with Avalanche Breakdown Behavior
• Dynamic Response of a Spinning Timoshenko Beam with General Boundary Conditions under a Moving Skew Force Using Global Assumed Mode Method
• High Performance Double Delta Doping GaAs/In_Ga_As/GaAs Pseudomorphic Heterostructure

スポンサーリンク