Chang C | National Nano Device Laboratory

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概要

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著作論文

New Large Angle Tilt Implanted Drain Structure: Surface Counter-Doped-Lightly Doped Drain for High Hot Carrier Reliability
A New Drain Engineering Structure-SCD-LDD (Surface Counter Doped LDD) for Improved Hot Carrier Reliability
Improvement of Reliability of Metal-Oxide Semiconductor Field-Effect Transistors with N_2O Nitrided Gate Oxide and N_2O Polysilicon Gate Reoxidation
High Carrier Density and Mobility in GaAs/InGaAs/GaAs Double Delta-Doped Channels Heterostructures
MBE Grown Undoped Superlattice Gate and Modulation-Doped Buffer Structure for Power FET Applications
Low-Pressure Crystallization of Sol-Gel-Derived PbZr_Ti_O_3 Thin Films at Low Temperature for Low-Voltage Operation
A Multilevel Interconnect Technology with Intrametal Air Gap for High-Performance 0.25-μm-and-Beyond Devices Manufacturing
Rugged Surface Polycrystalline Silicon Film Formed by Rapid Thermal Chemical Vapor Deposition for Dynamic Random Access Memory Stacked Capacitor Application
Measurement of Thin Oxide Films on Implanted Si-Substrate by Ellipsometry
The δ-Doped In_Ga_As/GaAs Pseudomorphic High Electron Mobility Transistor Structures Prepared by Low-Pressure Metal Organic Chemical Vapor Deposition
The Doped Quantum Well Gate FET Fabricated by Low-Pressure MOCVD : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials

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