New Large Angle Tilt Implanted Drain Structure: Surface Counter-Doped-Lightly Doped Drain for High Hot Carrier Reliability
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-07-15
著者
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Ho Lien
National Nano Device Laboratory And Institute Of Electronics National Chiao-tang University
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CHOU Jih
National Nano Device Laboratory and Institute of Electronics National Chiao-Tang University
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CHANG Chun
National Nano Device Laboratory and Institute of Electronics National Chiao-Tang University
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HUANG Chimoon
National Nano Device Laboratory and Institute of Electronics National Chiao-Tang University
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KO Joe
United Microelectronics Corporation, Science-Base Industrial Park
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HSUE Peter
United Microelectronics Corporation, Science-Base Industrial Park
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Chang C
National Nano Device Laboratory
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Chou Jih
Specialty Techology Division United Microelectronics Corporation
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Ko J
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Ko Joe
United Microelectronics Corporation (umc) Specialty Technology Division
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Hsue Peter
United Microelectronics Corporation Science-base Industrial Park
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CHOU Jih
Specialty Techology Division, United Microelectronics Corporation
関連論文
- New Large Angle Tilt Implanted Drain Structure: Surface Counter-Doped-Lightly Doped Drain for High Hot Carrier Reliability
- A New Drain Engineering Structure-SCD-LDD (Surface Counter Doped LDD) for Improved Hot Carrier Reliability
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