The Doped Quantum Well Gate FET Fabricated by Low-Pressure MOCVD : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-12-20
著者
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Chang C
National Nano Device Laboratory
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CHANG C.Y.
Institute o Electronics, National Chiao Tung University
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LIN W.
Department of Electrical Engineering, National Cheng Kung University
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LIN W.
Semiconductor and System Laboratories, Institute of Electrical and Computer Engineering, National Ch
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LEI M.D.
Semiconductor and System Laboratories, Institute of Electrical and Computer Engineering, National Ch
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HSU W.C.
Semiconductor and System Laboratories, Institute of Electrical and Computer Engineering, National Ch
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DI L.B.
Semiconductor and System Laboratories, Institute of Electrical and Computer Engineering, National Ch
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KAI F.
Semiconductor and System Laboratories, Institute of Electrical and Computer Engineering, National Ch
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Hsu W
National Cheng Kung Univ. Tainan Twn
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Chang C
Taipei Medical Univ. Taipei Jpn
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Di L.b.
Semiconductor And System Laboratories Institute Of Electrical And Computer Engineering National Chen
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Lei M.d.
Semiconductor And System Laboratories Institute Of Electrical And Computer Engineering National Chen
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Lin W
Gsj
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