A Multilevel Interconnect Technology with Intrametal Air Gap for High-Performance 0.25-μm-and-Beyond Devices Manufacturing

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-11-15

著者

• Chang Chun

  Institute Of Electronics National Chiao Tung University

• CHANG Chun

  National Nano Device Laboratory and Institute of Electronics National Chiao-Tang University

• Huang T

  National Chiao Tung Univ. Taiwan Chn

• Huang Tiao

  Institute Of Electronics National Chiao Tung University

• Chang C

  National Nano Device Laboratory

• LIN Mark

  Institute of Electronics, National Chiao Tung University

• Lin Mark

  Institute Of Electronics National Chiao Tung University

• LIN Mout-Lim

  United Semiconductor Corp

関連論文

• New Large Angle Tilt Implanted Drain Structure: Surface Counter-Doped-Lightly Doped Drain for High Hot Carrier Reliability
• A New Drain Engineering Structure-SCD-LDD (Surface Counter Doped LDD) for Improved Hot Carrier Reliability
• Improvement of Reliability of Metal-Oxide Semiconductor Field-Effect Transistors with N_2O Nitrided Gate Oxide and N_2O Polysilicon Gate Reoxidation
• Leakage Current Reduction of Chemical-Vapor-Deposited Ta_2O_5 Films on Rugged Polycrystalline Silicon Electrode for Dynamic Random Access Memory Application
• High Carrier Density and Mobility in GaAs/InGaAs/GaAs Double Delta-Doped Channels Heterostructures
• MBE Grown Undoped Superlattice Gate and Modulation-Doped Buffer Structure for Power FET Applications
• Low-Pressure Crystallization of Sol-Gel-Derived PbZr_Ti_O_3 Thin Films at Low Temperature for Low-Voltage Operation
• A Multilevel Interconnect Technology with Intrametal Air Gap for High-Performance 0.25-μm-and-Beyond Devices Manufacturing
• Rugged Surface Polycrystalline Silicon Film Formed by Rapid Thermal Chemical Vapor Deposition for Dynamic Random Access Memory Stacked Capacitor Application
• Measurement of Thin Oxide Films on Implanted Si-Substrate by Ellipsometry
• The δ-Doped In_Ga_As/GaAs Pseudomorphic High Electron Mobility Transistor Structures Prepared by Low-Pressure Metal Organic Chemical Vapor Deposition
• The Doped Quantum Well Gate FET Fabricated by Low-Pressure MOCVD : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
• Ambipolar Performances of Novel Amorphous Silicon-Germanium Alloy Thin-Film Transistors
• RF MOSFET Characterization by Four-Port Measurement(Microelectronic Test Structures)

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