RF MOSFET Characterization by Four-Port Measurement(<Special Section>Microelectronic Test Structures)

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概要

• 論文の詳細を見る

• RF MOSFET's are usually measured in common source configuration by a 2-port network analyzer, and the common gate and common drain S-parameters cannot be directly measured from a conventional 2-port test structure. In this work, a 4-port test structure for on-wafer measurement of RF MOSFET's is proposed. Four-port measurements for RF MOSFET's in different dimensions and the de-embedded procedures are performed up to 20 GHz. The S-parameters of the RF MOSFET in common source (CS), common gate (CG), and common drain (CD) configurations are obtained from a single DUT and one measurement procedure. The dependence of common source S-parameters of the device on substrate bias are also shown.

• 社団法人電子情報通信学会の論文
• 2005-05-01

著者

• Chang Chun

  Institute Of Electronics National Chiao Tung University

• HUANG Guo

  National Nano Devices Laboratories

• CHEN Kun

  National Nano Devices Laboratories

• Huang Guo

  National Nano Device Laboratories

• Chen Kun

  National Nano Device Laboratories

• Tseng Hua

  United Microelectronics Corporation

• Hsu Tsun

  United Microelectronics Corporation

• WU Shih

  Institute of Electronics, National Chiao Tung University

• Wu Shih

  Institute Of Electronics National Chiao Tung University

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