Ambipolar Performances of Novel Amorphous Silicon-Germanium Alloy Thin-Film Transistors
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概要
- 論文の詳細を見る
The limitation of low hole mobility in hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) was overcome in this present work by utilizing hydrogenated amorphous silicon-germanium (a-Si_<1-x>Ge.:H) alloys as the active channel of TFTs. The performance of hydrogenated amorphous silicon-germanium thin film transistors (a-SiGe:H TFTs) was optimized by switching the germane-to-silane flow ratio. The fabricated a-SiGe:H TFT with 12 at% germanium content was measured as possessing an electron mobility of 0.71 cm^2/V・s and a hole mobility of 0.54 cm^2/V・s. The on/off current ratio ranging over almost six orders of magnitude in both conduction modes was obtained. Thus a-SiGe:H TFT has offered the opportunity for upgrading of a-Si:H TFTs and would be feasible for application in [CMOS] circuits.
- 社団法人応用物理学会の論文
- 1993-08-01
著者
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Lee Yeong
Institute Of Electronics National Chiao Tung University:national Nano Device Laboratory
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Chang Chun
Institute Of Electronics National Chiao Tung University
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Chang Chun
Institute Of Electronics National Chiao Tung University:national Nano Device Laboratory
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Lee Yong
Dept. Of Eecs Korea Advanced Institute Of Science And Technology
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HSIEH Shou
Institute of Electronics, National Chiao Tung University
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LIN Chiung
Institute of Electronics, National Chiao Tung University
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WU Biing
Electronics Research and service Organization
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CHEN Hsiung
Electronics Research and service Organization
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Lin Chiung
Institute Of Electronics National Chiao Tung University:national Nano Device Laboratory
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Hsieh Shou
Institute Of Electronics National Chiao Tung University:national Nano Device Laboratory
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