A Study of LPE HgCdTe Wafer Characteristics Flattened with Single-Point Diamond Turning Method (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))

概要

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The flatness of HgCdTe wafers is essential for fabricating large infrared focal plane arrays (IRFPAs) within the framework of flip-chip bonding yield. However, liquid phase epitaxy (LPE) HgCdTe wafer, which is widely used for IRFPA, has innate problems with the surface flatness. In this study, we introduced single-point diamond turning (SPDT) method to LPE HgCdTe wafer. The surface roughness of LPE wafer has been drastically reduced and the fabricated photodiode showed R_0A of 〜1×10^4 Ωcm^2 for junction area of 30×30μm^2 at 80K, which is equivalent to that of the conventional photodiode. The flip-chip bonding efficiency has been extremely improved from 89.43% to 99.99% for 320×256 IRFPA at the room temperature after SPDT.
社団法人電子情報通信学会の論文
2005-06-22