Investigation of Abnormal Drain Current Increase of Tunneling Field-Effect Transistors(Session 3A : Emerging Device Technology 2)
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概要
- 論文の詳細を見る
A tunneling field-effect transistor (TFET) is a promising candidate to replace a MOSFET because the subthreshold swing (SS) of the TFET can be reduced below the 60 mV/dec at room temperature. However, the slope of log(I_<DS>)-V_<GS> curve of the TFET becomes smaller as gate voltage (V_<GS>) increases and eventually becomes smaller than that of the MOSFET when V_<GS> is high. It is problematic in that the drain current (I_<DS>) of the TFET cannot exceed that of the MOSFET. In this paper, we investigated the physical origin of the abnormal drain current increase in terms of band-to-band tunneling and drift mechanism..
- 2010-06-23
著者
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LEE Min
Department of Internal Medicine, Chonnam National University Hospital
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Choi Young
Department Of Physics Kyung Hee University
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Lee Min
Department Of Electronic Engineering Sogang University
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Choi Young
Department Of Biology Inha University
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Lee Min
Department Of Aeronautics And Astronautics Kyushu University
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Choi Young
Department Of Electronic Engineering Sogang University
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Choi Young
Department Of Biological Sciences Purdue University Calumet
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