Measurement of the Steady-State Minority Carrier Diffusion Length in a HgCdTe Photodiode
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概要
- 論文の詳細を見る
A new method is reported for estimating the steady-state effective minority carrier diffusion length. The diffusion length is determined by measuring photocurrents which decrease exponentially with the distance between the junction edge and the region into which environmental infrared light penetrates. The region exposed to infrared radiation can be defined using an optical shadow mask. Using this method, the steady-state effective minority carrier diffusion length of photodiodes fabricated on p-type bulk Hg_<0.7>Cd_<0.3>Te was determined to be 19 μm at all points on the wafer.
- 社団法人応用物理学会の論文
- 1996-10-15
著者
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LEE Hee
Department of Pharmacology, College of Medicine, Kohwang Medical Research Institute, Kyung Hee Unive
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Kim Choong-ki
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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Lee Hee
Department Of Chemistry Pohang University Of Science And Technology
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Jung H
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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Kim Choong-ki
Department Of Electrical Engineering And Center For Electro-optics Korea Advanced Institute Of Scien
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JUNG Han
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology
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Lee Hee
Department Of Anesthesiology And Pain Medicine Hanyang University College Of Medicine
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