Lee Hee | School Of Electrical Engineering And Computer Sciences Korea Advanced Institute Of Science And Techn

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著作論文

Study on Gate Around Transistor (GAT) Layout for Radiation Hardness(Session9A: Silicon Devices IV)
Study on Gate Around Transistor (GAT) Layout for Radiation Hardness(Session9A: Silicon Devices IV)
A Study of LPE HgCdTe Wafer Characteristics Flattened with Single-Point Diamond Turning Method (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
A Study of LPE HgCdTe Wafer Characteristics Flattened with Single-Point Diamond Turning Method (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
A Study on Lateral Surface Treatment of the CdTe X-ray image-sensor
A Study on Lateral Surface Treatment of the CdTe X-ray image-sensor
1/f Noise Characteristics of Hydrogenated Long-Wavelength Infrared HgCdTe Photodiode
Poly(3, 4-Ethylenedioxythiophene) : Poly(Styrenesulfonate) (PEDOT : PSS) Films for the Microbolometer Applications
A Study on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate)(PEDOT: PSS) Films for the Microbolometer Applications(Session5B: Emerging Devices III)
A Study on Poly (3,4-ethylenedioxythiophene): Poly (styrene sulfonate) (PEDOT:PSS) Films for the Microbolometer Applications(Session5B: Emerging Devices III)
Retention characteristics of nano scale ferroelectric VDF/TrFE copolymer film (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
Retention characteristics of nano scale ferroelectric VDF/TrFE copolymer film (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
Low Power Pixel-Level ADC Readout Circuit for an Amorphous Silicon-Based Microbolometer
Low power pixel-level ADC for a micro-bolometer(Session9A: Silicon Devices IV)
Low power pixel-level ADC for a micro-bolometer(Session9A: Silicon Devices IV)
Passivation Effect for the Reduction of $1/\aku f$ Noise in Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) Thin Films Based on Uncooled Type Microbolometer Applications

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