Rugged Surface Polycrystalline Silicon Film Formed by Rapid Thermal Chemical Vapor Deposition for Dynamic Random Access Memory Stacked Capacitor Application

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1998-06-01

著者

• Chang Chun

  Institute Of Electronics National Chiao Tung University

• CHANG Chun

  National Nano Device Laboratory and Institute of Electronics National Chiao-Tang University

• Huang T

  National Chiao Tung Univ. Taiwan Chn

• Huang Tiao

  Institute Of Electronics National Chiao Tung University

• Chang C

  National Nano Device Laboratory

• LIN Mark

  Institute of Electronics, National Chiao Tung University

• Lin Mark

  Institute Of Electronics National Chiao Tung University

• KUO Uin

  United Semiconductor Corp., Science Base Industrial Park

• Kuo Uin

  United Semiconductor Corp. Science Base Industrial Park

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• Improvement of Reliability of Metal-Oxide Semiconductor Field-Effect Transistors with N_2O Nitrided Gate Oxide and N_2O Polysilicon Gate Reoxidation
• Leakage Current Reduction of Chemical-Vapor-Deposited Ta_2O_5 Films on Rugged Polycrystalline Silicon Electrode for Dynamic Random Access Memory Application
• High Carrier Density and Mobility in GaAs/InGaAs/GaAs Double Delta-Doped Channels Heterostructures
• MBE Grown Undoped Superlattice Gate and Modulation-Doped Buffer Structure for Power FET Applications
• Low-Pressure Crystallization of Sol-Gel-Derived PbZr_Ti_O_3 Thin Films at Low Temperature for Low-Voltage Operation
• A Multilevel Interconnect Technology with Intrametal Air Gap for High-Performance 0.25-μm-and-Beyond Devices Manufacturing
• Rugged Surface Polycrystalline Silicon Film Formed by Rapid Thermal Chemical Vapor Deposition for Dynamic Random Access Memory Stacked Capacitor Application
• Measurement of Thin Oxide Films on Implanted Si-Substrate by Ellipsometry
• The δ-Doped In_Ga_As/GaAs Pseudomorphic High Electron Mobility Transistor Structures Prepared by Low-Pressure Metal Organic Chemical Vapor Deposition
• The Doped Quantum Well Gate FET Fabricated by Low-Pressure MOCVD : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
• Ambipolar Performances of Novel Amorphous Silicon-Germanium Alloy Thin-Film Transistors
• RF MOSFET Characterization by Four-Port Measurement(Microelectronic Test Structures)

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