A Capacitance Ratio Method Used for L_<eff> Extraction of an Advanced Metal-Oxide-Semiconductor Device with Halo Implant
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-06-01
著者
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Lee Ryan
Specialty Techology Division United Microelectronics Corporation
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Chen Y‐j
National Cheng Kung Univ. Tainan Twn
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HUANG Heng-Sheng
Institute of Mechatronics Engineering, National Taipei Universityof Technology
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LIN Shyn-Jye
Institute of Mechatronics Engineering, National Taipei Universityof Technology
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CHEN Ying-Jyh
Institute of Mechatronics Engineering, National Taipei Universityof Technology
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CHEN I-Kai
Institute of Mechatronics Engineering, National Taipei Universityof Technology
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CHOU J.
Specialty Techology Division, United Microelectronics Corporation
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HONG Gary
Specialty Techology Division, United Microelectronics Corporation
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LIN Shyh-Jye
Institute of Mechatoronic Engineering, National Taipei University of Technology
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Chou Jih
Specialty Techology Division United Microelectronics Corporation
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Hong G
Rodel‐nitta Co. Nara Jpn
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Hong Gary
Specialty Technology Division United Microelectronics Corporation
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Huang H‐s
National Taipei Univ. Technol. Taipei Twn
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Lin S‐j
National Chiao‐tung Univ. Hsinchu Twn
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Chen I-kai
Institute Of Mechatronics Engineering National Taipei Universityof Technology
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Chen Ying-jyh
Institute Of Mechatronics Engineering National Taipei Universityof Technology
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Huang Heng-sheng
Institute Of Automation Technology National Taipei University Of Technology
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Lin Shyn-jye
Institute Of Mechatronics Engineering National Taipei Universityof Technology
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Hong Gary
Specialty Techology Division United Microelectronics Corporation
-
Huang Heng-sheng
Institute Of Mechatronics Engineering National Taipei Universityof Technology
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Chou J.
Specialty Techology Division United Microelectronics Corporation
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Lee Ryan
Specialty Technology Division, United Microelectronics Corporation, Hsin-Chu, Taiwan, R.O.C.
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