Behavior of Nano-N-Channel Metal–Oxide–Semiconductor Off-State Leakage Currents

概要

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In this paper, leakage current behavior is discussed, particularly in the off state of nano-N-channel metal–oxide–semiconductor (NMOS) devices. In our experimental results, we observed a special phenomenon in the off-state $I$–$V$ (off-current components vs $V_{\text{D}}$) curves. We propose a new model named the gate current induced punch-through (GCIP) model, which is discussed in detail to explain this phenomenon. As the complementary metal–oxide–semiconductor (CMOS) device dimensions are being scaled down to the nano-scale level, the gate oxide thickness is becoming significantly thinner than in any other previously produced devices. The use of ultrathin gate oxide induces an off-state gate leakage current which is not neglect in the gate terminal, and possibly causes the generation of electron-hole pairs in the CMOS substrate. The avalanche effect on electron-hole pair generation finally causes the device punch-through. This punch-through phenomenon is induced by the gate tunneling current, and therefore we named it the GCIP model.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2004-02-15