Interfacial and Electrical Characterization in Metal–Oxide–Semiconductor Field-Effect Transistors with CeO2 Gate Dielectric

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概要

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• Metal–oxide–semiconductor capacitors (MOSCs) and MOS field-effect transistors (MOSFETs) incorporating cerium dioxide (CeO2) dielectrics were fabricated and investigated. In this work, the electrical and interfacial properties were characterized by capacitance–voltage ($C$–$V$) and current–voltage ($I$–$V$) measurements. The density of interface trap per unit area ($N_{\text{it}}$), the density of interface trap per unit area and energy ($D_{\text{it}}$), the energy distribution of interface trap density, and the effective capture cross section ($\sigma_{\text{s}}$) were studied in details. Experimental results showed that the $N_{\text{it}}$, $D_{\text{it}}$, and $\sigma_{\text{s}}$ were about $3.4\times 10^{10}$ cm-2, $7.3\times 10^{10}$ cm-2 eV-1, and $9.0\times 10^{-15}$ cm2, respectively. In addition, a comparison of interfacial properties among several gate dielectrics was made.

• 2009-04-25

著者

• Huang Heng-sheng

  Institute Of Automation Technology National Taipei University Of Technology

• Chiu Fu-Chien

  Department of Electronic Engineering, Ming Chuan University, No. 5, De-Ming Rd., Gui-Shan, Taoyuan County 333, Taiwan

• Chen Hung-Wen

  Institute of Mechatronic Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan

• Chen Shuang-Yuan

  Institute of Mechatronic Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan

• Chen Chun-Heng

  Institute of Electronics Engineering, National Tsing-Hua University, 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan

• Hwang Huey-Liang

  Institute of Electronics Engineering, National Tsing-Hua University, 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan

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