Dual Fiber-Optic Fabry–Perot Interferometer Temperature Sensor with Low-Cost Light-Emitting Diode Light Source

スポンサーリンク

概要

• 論文の詳細を見る

• A dual fiber-optic Fabry–Perot interferometer (FFPI) sensor system with a low-coherence communication-system light-emitting diode (LED) as a light source is investigated to detect temperature variation signals. In this system, there are two FFPIs: the sensing and reference FFPIs. When the perturbation of interest, such as that of temperature, disturbs the sensing FFPI to produce a phase shift, the light reflected from the sensor is demodulated by the reference FFPI to extract the measurand. A low-power (sub-nW) optical signal is converted into an electrical signal and processed by a designed optical receiver. This setup is availably applied in biosensors to compensate the temperature variation in a sensing environment or sense the temperature effect in a certain measurement on an interior local site.

• 2008-04-25

著者

• Wang Mu-chun

  Dept. Of Electronic Engineering Ming-hsin University Of Science And Technology

• Taylor Henry

  Dept. Of Electrical Engineering Texas A&m University

• Wang Jon-en

  Dept. Of Electrical Engineering Texas A&m University

• Tseng Fan-gang

  Institute Of Microelectromechanical System National Tsing Hua University

• Tseng Yuan-tai

  Institute Of Microelectromechanical System National Tsing Hua University

• Huang Heng-sheng

  Institute Of Automation Technology National Taipei University Of Technology

• Tseng Fan-Gang

  Institute of Microelectromechanical System, National Tsing Hua University, Hsinchu 300, Taiwan

• Hsieh Zhen-Ying

  Institute of Mechatronics Engineering, National Taipei University of Technology, Taipei 106, Taiwan

• Tseng Yuan-Tai

  Institute of Microelectromechanical System, National Tsing Hua University, Hsinchu 300, Taiwan

• Wang Mu-Chun

  Dept. of Electronic Engineering, Ming-Hsin University of Science and Technology, 1 Hsin-Hsing Road, Hsin-Fong, Hsinchu 304, Taiwan

• Taylor Henry

  Dept. of Electrical Engineering, Texas A&M University, College Station, TX77843, U.S.A.

• Huang Heng-Sheng

  Institute of Mechatronics Engineering, National Taipei University of Technology, Taipei 106, Taiwan

• Wang Jon-En

  Dept. of Electrical Engineering, Texas A&M University, College Station, TX77843, U.S.A.

関連論文

• Dual-FFPI Temperature Sensor with a Low-Cost LED Light Source
• A Capacitance Ratio Method Used for L_ Extraction of an Advanced Metal-Oxide-Semiconductor Device with Halo Implant
• The C-R Method Used for Leff Extraction and Process Optimization in Nano N/P-MOSFET's Devices
• The C-R Method Used for Leff Extraction and Process Optimization in Nano N/P-MOSFET's Devices
• New Polysilicon-Oxide-Nitride-Oxide-Silicon Electrically Erasable Programmable Read-only Memory Device Approach for Eliminating Off-Cell Leakage Current
• Charge Loss Due to AC Program Disturbance Stresses in EPROMs
• Trarnsient and Steady State Carrier Transport under High Field Stressesin SONOS EEPROM Device
• The fabrication and application of Zernike electrostatic phase plate
• Performance and Reliability Improvement of Low-Power Embedded Flash Memory with Shallow Trench Isolation Structure
• Interfacial and Electrical Characterization in Metal–Oxide–Semiconductor Field-Effect Transistors with CeO2 Gate Dielectric
• Dual Fiber-Optic Fabry–Perot Interferometer Temperature Sensor with Low-Cost Light-Emitting Diode Light Source
• Behavior of Nano-N-Channel Metal–Oxide–Semiconductor Off-State Leakage Currents
• Study on Nano Complementary Metal Oxide Semiconductor Gate Leakage Current
• A Modified Capacitance–Voltage Method Used for $L_{\text{eff}}$ Extraction and Process Monitoring in Advanced 0.15 $\mu$m Complementary Metal-Oxide-Semiconductor Technology and Beyond
• Performance and Reliability Improvement of Low-Power Embedded Flash Memory with Shallow Trench Isolation Structure

もっと見る 閉じる

スポンサーリンク