Huang Heng-sheng | Institute Of Automation Technology National Taipei University Of Technology

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概要

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著作論文

A Capacitance Ratio Method Used for L_ Extraction of an Advanced Metal-Oxide-Semiconductor Device with Halo Implant
The C-R Method Used for Leff Extraction and Process Optimization in Nano N/P-MOSFET's Devices
The C-R Method Used for Leff Extraction and Process Optimization in Nano N/P-MOSFET's Devices
New Polysilicon-Oxide-Nitride-Oxide-Silicon Electrically Erasable Programmable Read-only Memory Device Approach for Eliminating Off-Cell Leakage Current
Charge Loss Due to AC Program Disturbance Stresses in EPROMs
Trarnsient and Steady State Carrier Transport under High Field Stressesin SONOS EEPROM Device
Performance and Reliability Improvement of Low-Power Embedded Flash Memory with Shallow Trench Isolation Structure
Interfacial and Electrical Characterization in Metal–Oxide–Semiconductor Field-Effect Transistors with CeO2 Gate Dielectric
Dual Fiber-Optic Fabry–Perot Interferometer Temperature Sensor with Low-Cost Light-Emitting Diode Light Source
Behavior of Nano-N-Channel Metal–Oxide–Semiconductor Off-State Leakage Currents
Study on Nano Complementary Metal Oxide Semiconductor Gate Leakage Current
A Modified Capacitance–Voltage Method Used for $L_{\text{eff}}$ Extraction and Process Monitoring in Advanced 0.15 $\mu$m Complementary Metal-Oxide-Semiconductor Technology and Beyond
Performance and Reliability Improvement of Low-Power Embedded Flash Memory with Shallow Trench Isolation Structure

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