New Polysilicon-Oxide-Nitride-Oxide-Silicon Electrically Erasable Programmable Read-only Memory Device Approach for Eliminating Off-Cell Leakage Current

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-05-15

著者

• Chang C‐y

  Department Of Electronics Engineering National Chiao Tung University

• Chang Chun-yen

  Institute Of Electronics National Chiao Tung University

• Chang Chun-yen

  Instiute Of Electronics National Chiao-tang University

• Chang Chun-yen

  Department Of The Electro-optical Engineering National Chiao Tung University

• HUANG Heng-Sheng

  Institute of Mechatronics Engineering, National Taipei Universityof Technology

• LIN Jyh-Kuang

  Institute of Electronics, National Chiao Tung University

• CHEN Kun-Luh

  United Microelectronics Corporation, Science Based Industrial Park

• KUO Dah-Chih

  United Microelectronics Corporation, Science Based Industrial Park

• Chen K‐l

  United Microelectronics Corporation

• Huang Heng-sheng

  United Microelectronics Corporation:instiute Of Electronics National Chiao-tang University

• Kuo Dah-chih

  United Microelectronics Corporation Science Based Industrial Park

• Lin Jyh-kuang

  Instiute Of Electronics National Chiao-tang University

• Chang Chun-yen

  Institute Of Electronics National Chiao Tang University:national Nano-device Laboratories

• Chang C‐y

  Department Of Electronics Engineering Nation Chiao Tung University

• Huang Heng-sheng

  Institute Of Automation Technology National Taipei University Of Technology

• CHEN Kun-Luh

  United Microelectronics Corporation

関連論文

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• Degradation of Low-Frequency Noise in Partially Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors by Hot-Carrier Stress
• Degradation of Low-Frequency Noise in PD SOI MOSFETs after Hot-Carrier Stress
• Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures
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