Hydrogenated Amorphous Silicon Carbide P-I-N Thin-Film Light-Emitting Diodes with Barrier Layers Inserted at P-I Interface

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-01-30

著者

• Hong Jyh-wong

  Department Of Electrical Engineering National Central University

• Hong J‐w

  National Central Univ. Chung‐li Twn

• Chang Chun-yen

  Institute Of Electronics National Chiao Tung University

• TSAY Wen-Chin

  Department of Electrical Engineering, National Central University

• JEN Tean-Sen

  Department of Electrical Engineering, National Central University

• Tsay Wen-chin

  Department Of Electrical Engineering National Central University

• Jen Tean-sen

  Department Of Electrical Engineering National Central University

• Jen T‐s

  Department Of Electrical Engineering National Central University

• Chang Chun-yen

  Institute Of Electronics National Chiao Tang University:national Nano-device Laboratories

• PAN Jen-Wei

  Department of Electrical Engineering, National Central University

• SHIN Nerng-Fu

  Department of Electrical Engineering, National Central University

• HUNG Jyh-Wong

  Department of Electrical Engineering, National Central University

• Pan Jen-wei

  Department Of Electrical Engineering National Central University

• Shin Nerng-fu

  Department Of Electrical Engineering National Central University

関連論文

• Analysis of Narrow Width Effects in Polycrystalline Silicon Thin Film Transistors
• TiWN Schottky Contacts to n-Ga_In_P
• Improvement of Current Injection of Porous Silicon
• Improving the Transient Response of a Si Metal-Semiconductor-Metal Photodetector with an Additional i-a-SiGe:H Film
• Improving Transient Response of Si Metal-Semiconductor-Metal Photodetector with an Additional i-a-SiGe Film
• Improvement of Current Injection of Porous Silicon
• Effects of Dielectrics on the Characteristics of Large-Area Silicon Microstrip Sensors
• Double Graded-Gap Hydrogenated Amorphous Silicon Carbide Thin-Film Light-Emitting Diode with Composition-Graded N Layer and Carbon-Increasing P Layer
• Impact of Thermal Stability on the Characteristics of Complementary Metal Oxide Semiconductor Transistors with TiN Metal Gate
• Plasma-Process-Induced Damage in Sputtered TiN Metal-Gate Capacitors with Ultrathin Nitrided Oxides
• The Role of a Resist During O_2 Plasma Ashing and Its Impact on the Reliability Evaluation of Ultrathin Gate Oxides
• Temperature Influence on the Generalized Einstein Relation for Degenerate Semiconductors with Arbitrary Band Structures
• Effect of Interfacial Oxide on Static and High-Frequency Performance in Poly-Emitter Bipolar Transistors Under High-Level Injection
• Effect of Ge Concentration on Static and Microwave Performances in Ge_xSi_ Heterojunction Bipolar Transistors under High-Level Injection
• Effects of Rapid Thermal Annealing on Si Delta-Doped GaInP Grown by Low Pressure Metalorganic Chemical Vapor Deposition
• Silicon Delta Doping of GaInP Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• Direct Oxidation of Si_Ge_x Layers Using Vacuum-Ultra-Violet Light Radiation in Oxygen
• Epitaxy of Si_Ge_x by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si_2H_6 and GeH_4
• Characterization of Si/SiGe Strained-Layer Superlattices Grown by an Ultrahigh Vacuum/Chemical Vapor Deposition Technique
• Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition
• Dual-Band Mixer Design(RF, Analog Circuit and Device Technologies)
• Calibration of Non Linear Properties of Pb(Zr, Ti)O_3 Cantilever Using Integrated Piezoresistive Sensor for High Speed Atomic Force Microscopy
• Electrical and Optical Characteristics of an a-Si:H/c-Si Heterojunction Switch
• A CMOS Low-Noise Amplifier for Ultra Wideband Wireless Applications(Wide Band Systems)
• Electrical Characteristics of Thin HfO_2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments
• Back-Gating Effects on the Ga_In_P/InP/InGaAs High-Electron-Mobility Transistor
• Cation Source Dependence of Ga_In_P Growth Rate by Low-Pressure Metalorganic Chemical Vapor Deposition
• Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
• Dimensional Effects on the Drain Current of N-and P-Channel Polycrystalline Silicon Thin Film Transistors
• New Polysilicon-Oxide-Nitride-Oxide-Silicon Electrically Erasable Programmable Read-only Memory Device Approach for Eliminating Off-Cell Leakage Current
• Leakage Current Reduction of Chemical-Vapor-Deposited Ta_2O_5 Films on Rugged Polycrystalline Silicon Electrode for Dynamic Random Access Memory Application
• Effects of N_2O-Plasma Treatment of a-SiO_xN_y/a-SiN_x Gate Insulators on Electrical Stability of a-Si:H Thin-Film Transistors
• Orientation Dependence of Coherent Hole Oscillations in GaAs/AlGaAs Coupled Quantum Wells
• Molecular Beam Epitaxy Grown GaAs Bipolar-Unipolar Transition Negative Differential Resistance Power Transistor
• A Novel Thin-Film Transistor with Vertical Offset Structure
• Hydrogenated Amorphous Silicon Carbide P-I-N Thin-Film Light-Emitting Diodes with Barrier Layers Inserted at P-I Interface
• Low-Pressure Crystallization of Sol-Gel-Derived PbZr_Ti_O_3 Thin Films at Low Temperature for Low-Voltage Operation
• The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
• Effects of Dielectrics on the Characteristics of Large-Area Silicon Microstrip Sensors
• Double Graded-Gap a-SiC:H P-I-N Thin-Film LED with Composition-Graded N-Layer and Carbon-Increasing P-Layer
• A Study on Bilateral Latch-Up Self-Triggering in Complementary Metal-Oxide-Semiconductor Protection Circuits
• Charge Loss Due to AC Program Disturbance Stresses in EPROMs
• Trarnsient and Steady State Carrier Transport under High Field Stressesin SONOS EEPROM Device
• A Novel SiGe Raised Source/Drain Polycrystalline Silicon Thin-Film Transistor with Improved On-Current and Larger Breakdown Voltage
• Direct Measurement of Electrical Hysteresis of Micron-Sized Pb(Zr, Ti)O_3 Capacitors using the Constant Current Method
• Characteristics of In_Ga_As/In_Al_As Heterostructures Grown on GaAs Using InAlAs Buffers
• Improved electrical characteristics of Pt/Gd_2O_3/GaAs MOS capacitors with surface preparation procedures
• Double Graded-Gap Hydrogenated Amorphous Silicon Carbide Thin-Film Light-Emitting Diode with Composition-Graded N Layer and Carbon-Increasing P Layer
• Reliability of Strained SiGe Channel p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Ultra-Thin ($\text{EOT}=3.1$ nm) N2O-Annealed SiN Gate Dielectric
• Deep Sub-Micron Strained Si_Ge_ Channel p-channel Metal-Oxide-Semiconductor Field-Effect Transistors (pMOSFETs) with Ultra-Thin N_2O-Annealed SiN Gate Dielectric
• Effects of Dielectrics on the Characteristics of Large-Area Silicon Microstrip Sensors
• Deep Sub-Micron Strained Si0.85Ge0.15 Channel p-channel Metal-Oxide-Semiconductor Field-Effect Transistors (pMOSFETs) with Ultra-Thin N2O-Annealed SiN Gate Dielectric
• The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
• Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
• Efficiency and Droop Improvement in InGaN/GaN Light-Emitting Diodes by Selective Carrier Distribution Manipulation
• The Role of a Resist During O2 Plasma Ashing and Its Impact on the Reliability Evaluation of Ultrathin Gate Oxides
• Triangular Current: Method for Measuring Hysteresis Loops of Ferroelectric Capacitors
• Electrical Characteristics of Thin HfO2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments
• Analysis of Narrow Width Effects in Polycrystalline Silicon Thin Film Transistors
• Switching Current Study: Hysteresis Measurement of Ferroelectric Capacitors using Current–Voltage Measurement Method
• A Novel SiGe Raised Source/Drain Polycrystalline Silicon Thin-Film Transistor with Improved On-Current and Larger Breakdown Voltage
• Low-Pressure Crystallization of Sol–Gel-Derived PbZr0.52Ti0.48O3 Thin Films at Low Temperature for Low-Voltage Operation

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