Improving the Transient Response of a Si Metal-Semiconductor-Metal Photodetector with an Additional i-a-SiGe:H Film
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-03-30
著者
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Hong Jyh-wong
Department Of Electrical Engineering National Central University
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Hong J‐w
National Central Univ. Chung‐li Twn
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Laih L‐h
Chunghwa Telecom Co. Ltd. Taoyuan Twn
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CHEN Yen-Ann
Department of Electrical Engineering, National Central University
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LAIH Li-Hong
Department of Electrical Engineering, National Central University
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TSAY Wen-Chin
Department of Electrical Engineering, National Central University
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WANG Jyh-Cheng
Department of Electrical Engineering, National Central University
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JEN Tean-Sen
Department of Electrical Engineering, National Central University
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CHEN Jyh-Shin
Precision Instrument Development Center
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Tsay Wen-chin
Department Of Electrical Engineering National Central University
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Chen Yen-ann
Department Of Electrical Engineering National Central University
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Wang Jyh-cheng
Department Of Electrical Engineering National Central University
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Jen Tean-sen
Department Of Electrical Engineering National Central University
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Jen T‐s
Department Of Electrical Engineering National Central University
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Chen J‐s
National Sci. Council(nsc) Hsinchu Twn
関連論文
- Passivation of GaAs Power Field-Effect Transistor Using Electron Cyclotron Resonance Chemical Vapor Deposition Silicon Nitride Technique
- Improvement of Current Injection of Porous Silicon
- Improving the Transient Response of a Si Metal-Semiconductor-Metal Photodetector with an Additional i-a-SiGe:H Film
- Improving Transient Response of Si Metal-Semiconductor-Metal Photodetector with an Additional i-a-SiGe Film
- Improvement of Current Injection of Porous Silicon
- Effects of Dielectrics on the Characteristics of Large-Area Silicon Microstrip Sensors
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