Improvement of Current Injection of Porous Silicon
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-03-30
著者
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Hong Jyh-wong
Department Of Electrical Engineering National Central University
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Hong J‐w
National Central Univ. Chung‐li Twn
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Laih L‐h
Chunghwa Telecom Co. Ltd. Taoyuan Twn
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CHEN Yen-Ann
Department of Electrical Engineering, National Central University
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LIANG Nai-Yuan
Department of Electrical Engineering, National Central University
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LAIH Li-Hong
Department of Electrical Engineering, National Central University
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TSAY Wen-Chin
Department of Electrical Engineering, National Central University
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CHANG Mao-Nan
Department of Electrical Engineering, National Central University
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Tsay Wen-chin
Department Of Electrical Engineering National Central University
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Chen Yen-ann
Department Of Electrical Engineering National Central University
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Liang Nai-yuan
Department Of Electrical Engineering National Central University
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Chang M‐n
National Central Univ. Chung‐li Twn
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Chang Mao-nan
Department Of Electrical Engineering National Central University
関連論文
- Improvement of Current Injection of Porous Silicon
- Improving the Transient Response of a Si Metal-Semiconductor-Metal Photodetector with an Additional i-a-SiGe:H Film
- Improving Transient Response of Si Metal-Semiconductor-Metal Photodetector with an Additional i-a-SiGe Film
- Improvement of Current Injection of Porous Silicon
- Effects of Dielectrics on the Characteristics of Large-Area Silicon Microstrip Sensors
- Double Graded-Gap Hydrogenated Amorphous Silicon Carbide Thin-Film Light-Emitting Diode with Composition-Graded N Layer and Carbon-Increasing P Layer
- Calibration of Non Linear Properties of Pb(Zr, Ti)O_3 Cantilever Using Integrated Piezoresistive Sensor for High Speed Atomic Force Microscopy
- Effects of N_2O-Plasma Treatment of a-SiO_xN_y/a-SiN_x Gate Insulators on Electrical Stability of a-Si:H Thin-Film Transistors
- Hydrogenated Amorphous Silicon Carbide P-I-N Thin-Film Light-Emitting Diodes with Barrier Layers Inserted at P-I Interface
- Effects of Dielectrics on the Characteristics of Large-Area Silicon Microstrip Sensors
- Double Graded-Gap a-SiC:H P-I-N Thin-Film LED with Composition-Graded N-Layer and Carbon-Increasing P-Layer
- Photoluminescence Characteristics of Self-Assembled In_Ga_As Quantum Dots on Vicinal GaAs Substrates
- Double Graded-Gap Hydrogenated Amorphous Silicon Carbide Thin-Film Light-Emitting Diode with Composition-Graded N Layer and Carbon-Increasing P Layer
- Effects of Dielectrics on the Characteristics of Large-Area Silicon Microstrip Sensors
- Photoluminescence Characteristics of Self-Assembled In0.5Ga0.5As Quantum Dots on Vicinal GaAs Substrates