Photoluminescence Characteristics of Self-Assembled In0.5Ga0.5As Quantum Dots on Vicinal GaAs Substrates

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概要

• 論文の詳細を見る

• The properties of self-assembled In0.5Ga0.5As quantum dots on vicinal GaAs substrates are investigated by atomic force microscopy and temperature-dependent photoluminescence (PL). It is found that both the size variation and the density of the quantum dots depend closely on the orientation of substrates. PL spectra indicate that the In0.5Ga0.5As quantum dots on 4°-off substrate exhibit higher intensity compared to those on 15°-off and exact (100) substrates. The activation energy derived from the temperature-dependent PL of the In0.5Ga0.5As quantum dots on 4°-off substrate is higher than that of the dots on 15°-off substrate. The quantum dots on exact (100) substrate exhibit the lowest activation energy because a thick wetting layer is formed.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1999-01-30

著者

• Chang Mao-nan

  Department Of Electrical Engineering National Central University

• Yeh Nien-tze

  Department Of Electrical Engineering National Central University

• Nee Tzer-En

  Institute of Electro-Optical Engineering, Department of Electronic Engineering, Chang Gung University, Kweisan, Taoyuan 333, Taiwan, R.O.C.

• Chang Mao-Nan

  Department of Electrical Engineering, National Central University,

• Po-WenShiao Po-WenShiao

  Department of Electrical Engineering, National Central University,

• Lee Jen-InnChyi

  Institute of Optical Science, National Central University,

• Yeh Nien-Tze

  Department of Electrical Engineering, National Central University,

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• Improvement of Current Injection of Porous Silicon
• Room-Temperature Operation of In_Ga_As Quantum Dot Lasers Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy
• Photoluminescence Characteristics of Self-Assembled In_Ga_As Quantum Dots on Vicinal GaAs Substrates
• Excitation Density and Temperature Dependent Photoluminescence of InGaAs Self-Assembled Quantum Dots
• Effect of Excitonic Interactions on Abnormal Luminescence Behaviour of InGaN/GaN Light-Emitting Diodes with Electron Tunneling Layer
• Photoluminescence Characteristics of Self-Assembled In0.5Ga0.5As Quantum Dots on Vicinal GaAs Substrates

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