Trarnsient and Steady State Carrier Transport under High Field Stressesin SONOS EEPROM Device

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-06-15

著者

• Chang C‐y

  Department Of Electronics Engineering National Chiao Tung University

• Chang Chun-yen

  Institute Of Electronics National Chiao Tung University

• Chang Chun-yen

  Instiute Of Electronics National Chiao-tang University

• Chang Chun-yen

  Department Of The Electro-optical Engineering National Chiao Tung University

• HUANG Heng-Sheng

  Institute of Mechatronics Engineering, National Taipei Universityof Technology

• LIN Jyh-Kuang

  Institute of Electronics, National Chiao Tung University

• Chen K‐l

  United Microelectronics Corporation

• Huang Heng-sheng

  United Microelectronics Corporation:instiute Of Electronics National Chiao-tang University

• Lin Jyh-kuang

  Instiute Of Electronics National Chiao-tang University

• Chang Chun-yen

  Institute Of Electronics National Chiao Tang University:national Nano-device Laboratories

• HO Tai-Shung

  Memory Products Division, United Microelectronics Corporation

• CHEN Kun-Luh

  Memory Products Division, United Microelectronics Corporation

• Ho Tai-shung

  Memory Products Division United Microelectronics Corporation

• Chang C‐y

  Department Of Electronics Engineering Nation Chiao Tung University

• Huang Heng-sheng

  Institute Of Automation Technology National Taipei University Of Technology

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