Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-01-15
著者
-
Chang C‐y
Department Of Electronics Engineering National Chiao Tung University
-
Huang Guo-wei
National Nano Device Laboratories
-
Wang T
National Chiao Tung Univ. Hsin‐chu Twn
-
Chang Chun-yen
Institute Of Electronics National Chiao Tung University
-
Chang Chun-yen
Instiute Of Electronics National Chiao-tang University
-
Chang Chun-yen
Department Of The Electro-optical Engineering National Chiao Tung University
-
LIN Horng-Chih
Institute of Electronics, National Chiao Tung University
-
Lin H‐c
National Nano Device Laboratories
-
Lin Horng-chih
Institute Of Electronics National Chiao Tung University
-
HUANG Guo-Wei
Institute of Electronics, National Chiao Tung University
-
TSAI Wen-Chung
Department of Electronic Engineering and Institute of Electronics, National Chiao-Tung University
-
TSAI Wen-Chung
Institute of Electronics, National Chiao Tung University
-
JUNG Tz-Guei
Institute of Electronics, National Chiao Tung University
-
WANG Pei-Jih
National Nano Device Laboratory
-
Chang Chun-yen
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
-
CHANC Ting-Chang
Institute of Electronics, National Chiao Tung University
-
WANG Tom
Institute of Electronics, National Chiao Tung University
-
JUNG Tz-Guei
Department of Electronic Engineering and Institute of Electronics, National Chiao-Tung University
-
Tsai Wen-chung
Department Of Electronic Engineering And Institute Of Electronics National Chiao-tung University
-
Chang T‐c
Department Of Physics National Sun Yat-sen University
-
Huang G‐w
National Nano Device Laboratories
-
Jung Tz-guei
Department Of Electronic Engineering And Institute Of Electronics National Chiao-tung University
-
Chang Chun-yen
Institute Of Electronics National Chiao Tang University:national Nano-device Laboratories
-
Chang T‐c
National Nano Device Laboratories:department Of Physics National Sun Yat-sen University
-
Chang C‐y
Department Of Electronics Engineering Nation Chiao Tung University
関連論文
- A New Method to Extract MOSFET Threshold Voltage, Effective Channel Length, and Channel Mobility Using S-parameter Measurement(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millim
- Investigation of the Indium Atom Interdiffusion on the Growth of GaN/InGaN Heterostructures
- Analysis of Temperature Effects on the High-Frequency Characteristics of RF LDMOS Transistors
- Characterization of RF LDMOS Transistors with Different Layout Structures
- Analysis of Narrow Width Effects in Polycrystalline Silicon Thin Film Transistors
- Degradation of Low-Frequency Noise in Partially Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors by Hot-Carrier Stress
- Degradation of Low-Frequency Noise in PD SOI MOSFETs after Hot-Carrier Stress
- Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures
- High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well Power High-Electron-Mobility Transistors for 2.4 V Medium-Power Wireless Communication Applications
- A Simple Fabrication Process of T-Shaped Gates Using a Deep-UV/Electron-Beam/Deep-UV : Tri-Layer Resist System and Electron-Beam Lithography
- A High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well HEMT for 2.4V Medium-Power Wireless Communication Applications
- TiWN Schottky Contacts to n-Ga_In_P
- Double Graded-Gap Hydrogenated Amorphous Silicon Carbide Thin-Film Light-Emitting Diode with Composition-Graded N Layer and Carbon-Increasing P Layer
- Characteristics of Poly-Si Nanowire Thin Film Transistors with Double-Gated Structures
- A novel method to convert metallic-type CNTs to semiconducting-type CNT-FETs
- Application of Field-Induced Source/Drain Schottky Metal-Oxide-Semiconductor to Fin-Like Body Field-Effect Transistor : semiconductors
- Impact of Thermal Stability on the Characteristics of Complementary Metal Oxide Semiconductor Transistors with TiN Metal Gate
- Plasma-Process-Induced Damage in Sputtered TiN Metal-Gate Capacitors with Ultrathin Nitrided Oxides
- The Combined Effects of Nitrogen Implantation at S/D Extension and N_2O Oxide on 0.18μm N- and P-Metal Oxide Field Effect Transistors (MOSEETs)
- The Effects of Shallow Germanium Halo Doping on N-Channel Metal Oxide Semiconductor Field Effect Transistors
- The Role of a Resist During O_2 Plasma Ashing and Its Impact on the Reliability Evaluation of Ultrathin Gate Oxides
- Characterization of Antenna Effect by Nondestructive Gate Current Measurement
- Temperature Influence on the Generalized Einstein Relation for Degenerate Semiconductors with Arbitrary Band Structures
- Effect of Interfacial Oxide on Static and High-Frequency Performance in Poly-Emitter Bipolar Transistors Under High-Level Injection
- Effect of Ge Concentration on Static and Microwave Performances in Ge_xSi_ Heterojunction Bipolar Transistors under High-Level Injection
- Effects of Rapid Thermal Annealing on Si Delta-Doped GaInP Grown by Low Pressure Metalorganic Chemical Vapor Deposition
- Silicon Delta Doping of GaInP Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy
- A 5.2GHz 47dB Image Rejection Double Quadrature Gilbert Downconverter Using 0.35μm SiGe HBT Technology(Analog Circuit Techniques and Related Topics)
- A 5.7 GHz Gilbert Upconversion Mixer with an LC Current Combiner Output Using 0.35μm SiGe HBT Technology(RF, Analog Circuit and Device Technologies)
- Noise Parameters Computation of Microwave Devices Using Genetic Algorithms(Active Circuits & Antenna, Recent Technologies of Microwave and Millimeter-Wave Devices Focusing on Miniaturization and Advancement in Performance with Their Appli
- A Novel Approach for Parameter Determination of HBT Small-Signal Equivalent Circuit(Model, Analog Circuit and Device Technologies)
- CMOS RFIC : Application to Wireless Transceiver Design (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
- P-Channel Metal Oxide Semiconductor Field Effect Transistors with Polycrystalline-Si_Ge_x Gate Grown by Ultra-High Vacuum Chemical Vapor Deposition System
- Direct Oxidation of Si_Ge_x Layers Using Vacuum-Ultra-Violet Light Radiation in Oxygen
- Very High Hole Mobility in P-Type Si/SiGe Modulation-Doped Heterostructures
- Epitaxy of Si_Ge_x by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si_2H_6 and GeH_4
- Characterization of Si/SiGe Strained-Layer Superlattices Grown by an Ultrahigh Vacuum/Chemical Vapor Deposition Technique
- Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition
- Dual-Band Mixer Design(RF, Analog Circuit and Device Technologies)
- A High-Temperature Thermodynamic Model for Metalorganic Vapor Phase Epitaxial Growth of InGaN
- Raman and X-Ray Studies of InN Films Grown at Different Temperatures by Metalorganic Vapor Phase Epitaxy
- Electrical and Optical Characteristics of an a-Si:H/c-Si Heterojunction Switch
- A CMOS Low-Noise Amplifier for Ultra Wideband Wireless Applications(Wide Band Systems)
- Interfacial Abruptness in Si/SiGe Heteroepitaxy Grown by Ultrahigh Vacuum Chemical Vapor Deposition
- Electrical Characteristics of Thin HfO_2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments
- Electrical Properties of Multiple High-Dose Si Implantation in p-GaN
- Epitaxial Growth of the GaN Film by Remote-Plasma Metalorganic Chemical Vapor Deposition
- Back-Gating Effects on the Ga_In_P/InP/InGaAs High-Electron-Mobility Transistor
- Cation Source Dependence of Ga_In_P Growth Rate by Low-Pressure Metalorganic Chemical Vapor Deposition
- Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application : Semiconductors
- Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
- Dimensional Effects on the Drain Current of N-and P-Channel Polycrystalline Silicon Thin Film Transistors
- Excellent Au/Ge/Pd Ohmic Contacts to n-type GaAs Using Mo/Ti as the Diffusion Barrier
- High-Performance Au/Ti/Ge/Pd Ohmic Contacts on n-Type In_Ga_P
- New Polysilicon-Oxide-Nitride-Oxide-Silicon Electrically Erasable Programmable Read-only Memory Device Approach for Eliminating Off-Cell Leakage Current
- Growth of ZnSe Epilayer on Si Using Ge/Ge_xSi_ Buffer Structure
- Leakage Current Reduction of Chemical-Vapor-Deposited Ta_2O_5 Films on Rugged Polycrystalline Silicon Electrode for Dynamic Random Access Memory Application
- Effects of N_2O-Plasma Treatment of a-SiO_xN_y/a-SiN_x Gate Insulators on Electrical Stability of a-Si:H Thin-Film Transistors
- Orientation Dependence of Coherent Hole Oscillations in GaAs/AlGaAs Coupled Quantum Wells
- Molecular Beam Epitaxy Grown GaAs Bipolar-Unipolar Transition Negative Differential Resistance Power Transistor
- A Novel Thin-Film Transistor with Vertical Offset Structure
- Hydrogenated Amorphous Silicon Carbide P-I-N Thin-Film Light-Emitting Diodes with Barrier Layers Inserted at P-I Interface
- Low-Pressure Crystallization of Sol-Gel-Derived PbZr_Ti_O_3 Thin Films at Low Temperature for Low-Voltage Operation
- Enhanced Negative-Bias-Temperature Instability of P-Channel Metal-Oxide-Semiconductor Transistors due to Plasma Charging Damage
- Post-Soft-Breakdown Characteristics of Deep Sub-Micron NMOSFETs with Ultra-Thin Gate Oxide
- Enhanced Negative-Bias-Temperature Instability of P-Channel MOSFET by Plasma Charging Damage
- The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
- Optimization of Short Channel Effect With Arsenic Halo Implant through Polysilicon Gate : Semiconductors
- Shallow-Trench Isolation With Raised-Field-Oxide Structure
- Double Graded-Gap a-SiC:H P-I-N Thin-Film LED with Composition-Graded N-Layer and Carbon-Increasing P-Layer
- The Elimination of Inversion Domains in MBE-GaN Grown Using Low Temperature Nitridation
- A Study on Bilateral Latch-Up Self-Triggering in Complementary Metal-Oxide-Semiconductor Protection Circuits
- The Behavior of Bilateral Latch-Up Triggering in VLSI Electro Static Discharge Damage Protection Circuits
- Charge Loss Due to AC Program Disturbance Stresses in EPROMs
- Trarnsient and Steady State Carrier Transport under High Field Stressesin SONOS EEPROM Device
- A method for suppressing deep-level emission in ZnSe/Ge/Ge_xSi_/Si structure
- Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications
- New Nanometer T-Gate Fabricated by Thermally Reflowed Resist Technique : Instrumentation, Measurement, and Fabrication Technology
- Pulsed Characteristics of Microwave SiGe Heterojunction Bipolar Transistors Operated at High Collector Voltages
- High-Frequency Characteristics of SiGe Heterojunction Bipolar Transistors under Pulsed-Mode Operation(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devi
- A Novel SiGe Raised Source/Drain Polycrystalline Silicon Thin-Film Transistor with Improved On-Current and Larger Breakdown Voltage
- Direct Measurement of Electrical Hysteresis of Micron-Sized Pb(Zr, Ti)O_3 Capacitors using the Constant Current Method
- Impacts of SiN Deposition Conditions on NMOSFETs
- The Port-to-Port Isolation the Downconversion P-Type Micromixer Using Different N-Well Topologies(Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
- The Effect of Selectively and Fully Ion-Implanted Collector on RF Characteristics of BJT Devices(Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
- Design and Analysis of On-Chip Tapered Transformers for Silicon RFICs
- Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal-Oxide-Semiconductor Transistors (Special Issue : Solid State Devices and Materials (1))
- Radio-Frequency Small-Signal and Noise Modeling for Silicon-on-Insulator Dynamic Threshold Voltage Metal–Oxide–Semiconductor Field-Effect Transistors
- Analysis of Temperature Effects on High-Frequency Characteristics of RF Lateral-Diffused Metal–Oxide–Semiconductor Transistors
- Radio-Frequency Silicon-on-Insulator Modeling Considering the Neutral-Body Effect
- Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications
- Characterization of RF Lateral-Diffused Metal–Oxide–Semiconductor Field-Effect Transistors with Different Layout Structures
- Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures
- Effect of Mixed-Mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe Hetero-Junction Bipolar Transistors
- Low-Frequency Noise Characteristics of SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Compressive Interlayer-Dielectric-SiNx Stressing Layer
- Degradation of Low-Frequency Noise in Partially Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors by Hot-Carrier Stress
- Implementation of Surface Acoustic Wave Vapor Sensor Using Complementary Metal–Oxide–Semiconductor Amplifiers
- Design and Analysis of On-Chip Tapered Transformers for Silicon Radio-Frequency Integrated Circuits
- A Monolithic SiGe Heterojunction Bipolar Transistor Gilbert Upconverter with Inductor–Capacitor Current Mirror Load and Lumped-Element Rat-Race Balun