High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well Power High-Electron-Mobility Transistors for 2.4 V Medium-Power Wireless Communication Applications

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-03-30

著者

• Chang C‐y

  Department Of Electronics Engineering National Chiao Tung University

• Wang Sheng-ping

  Hexawave Inc Hsinchu Science-based Industrial Park

• CHANG Chun-Yen

  National Nano Device Laboratories

• Chang E‐y

  National Chiao Tung Univ. Hsinchu Twn

• Chang Chun-yen

  Instiute Of Electronics National Chiao-tang University

• Chang Chun-yen

  Department Of The Electro-optical Engineering National Chiao Tung University

• CHANG Edward

  Institute of Material Science and Engineering, National Chiao Tung University

• Lai Y‐l

  National Changhua Univ. Education Changhua Twn

• LAI Yeong-Lin

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• LIU T.

  Hexawave, Inc, Hsinchu Science-based Industrial Park

• WANG S.P.

  Hexawave, Inc, Hsinchu Science-based Industrial Park

• Lai Yeong-lin

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Chang Edward

  Institute Of Material Science And Engineering National Chiao Tung University

• Chang C‐y

  Department Of Electronics Engineering Nation Chiao Tung University

• Chang Chun-Yen

  National Chiao Tung University, Hsinchu, Taiwan, 30050, Republic Of China

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