Epitaxy of Si_<1-x>Ge_x by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si_2H_6 and GeH_4

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-07-15

著者

• Chang C‐y

  Department Of Electronics Engineering National Chiao Tung University

• Chang Chun-yen

  Institute Of Electronics National Chiao Tung University

• CHEN Liang-Po

  National Nano Device Laboratory

• LIN Horng-Chih

  National Nano Device Labs.

• TSENG Hua-Chou

  Institute of Electronics, National Chiao Tung University

• HUANG Guo-Wei

  Institute of Electronics, National Chiao Tung University

• CHOU Tsung-Chih

  National Nano Device Laboratory

• TSAI Wen-Chung

  Institute of Electronics, National Chiao Tung University

• Tsai Wen-chung

  Department Of Electronic Engineering And Institute Of Electronics National Chiao-tung University

• Chen Liang-po

  National Nano Device Laboratories

• Chang Chun-yen

  Institute Of Electronics National Chiao Tang University:national Nano-device Laboratories

• Lin Horng-chih

  National Chiao Tung University

• LIN Horng-Chih

  National Nano Device Laboratory

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