Chang C‐y | Department Of Electronics Engineering National Chiao Tung University

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概要

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著作論文

A New Method to Extract MOSFET Threshold Voltage, Effective Channel Length, and Channel Mobility Using S-parameter Measurement(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millim
Investigation of the Indium Atom Interdiffusion on the Growth of GaN/InGaN Heterostructures
Analysis of Temperature Effects on the High-Frequency Characteristics of RF LDMOS Transistors
Characterization of RF LDMOS Transistors with Different Layout Structures
Degradation of Low-Frequency Noise in Partially Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors by Hot-Carrier Stress
Degradation of Low-Frequency Noise in PD SOI MOSFETs after Hot-Carrier Stress
Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures
High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well Power High-Electron-Mobility Transistors for 2.4 V Medium-Power Wireless Communication Applications
A Simple Fabrication Process of T-Shaped Gates Using a Deep-UV/Electron-Beam/Deep-UV : Tri-Layer Resist System and Electron-Beam Lithography
A High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well HEMT for 2.4V Medium-Power Wireless Communication Applications
TiWN Schottky Contacts to n-Ga_In_P
Temperature Influence on the Generalized Einstein Relation for Degenerate Semiconductors with Arbitrary Band Structures
Effect of Interfacial Oxide on Static and High-Frequency Performance in Poly-Emitter Bipolar Transistors Under High-Level Injection
Effect of Ge Concentration on Static and Microwave Performances in Ge_xSi_ Heterojunction Bipolar Transistors under High-Level Injection
Effects of Rapid Thermal Annealing on Si Delta-Doped GaInP Grown by Low Pressure Metalorganic Chemical Vapor Deposition
Silicon Delta Doping of GaInP Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
Noise Parameters Computation of Microwave Devices Using Genetic Algorithms(Active Circuits & Antenna, Recent Technologies of Microwave and Millimeter-Wave Devices Focusing on Miniaturization and Advancement in Performance with Their Appli
A Novel Approach for Parameter Determination of HBT Small-Signal Equivalent Circuit(Model, Analog Circuit and Device Technologies)
CMOS RFIC : Application to Wireless Transceiver Design (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
P-Channel Metal Oxide Semiconductor Field Effect Transistors with Polycrystalline-Si_Ge_x Gate Grown by Ultra-High Vacuum Chemical Vapor Deposition System
Direct Oxidation of Si_Ge_x Layers Using Vacuum-Ultra-Violet Light Radiation in Oxygen
Very High Hole Mobility in P-Type Si/SiGe Modulation-Doped Heterostructures
Epitaxy of Si_Ge_x by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si_2H_6 and GeH_4
Characterization of Si/SiGe Strained-Layer Superlattices Grown by an Ultrahigh Vacuum/Chemical Vapor Deposition Technique
Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition
Dual-Band Mixer Design(RF, Analog Circuit and Device Technologies)
A CMOS Low-Noise Amplifier for Ultra Wideband Wireless Applications(Wide Band Systems)
Interfacial Abruptness in Si/SiGe Heteroepitaxy Grown by Ultrahigh Vacuum Chemical Vapor Deposition
Electrical Properties of Multiple High-Dose Si Implantation in p-GaN
Epitaxial Growth of the GaN Film by Remote-Plasma Metalorganic Chemical Vapor Deposition
Back-Gating Effects on the Ga_In_P/InP/InGaAs High-Electron-Mobility Transistor
Cation Source Dependence of Ga_In_P Growth Rate by Low-Pressure Metalorganic Chemical Vapor Deposition
Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application : Semiconductors
Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
Dimensional Effects on the Drain Current of N-and P-Channel Polycrystalline Silicon Thin Film Transistors
Excellent Au/Ge/Pd Ohmic Contacts to n-type GaAs Using Mo/Ti as the Diffusion Barrier
High-Performance Au/Ti/Ge/Pd Ohmic Contacts on n-Type In_Ga_P
New Polysilicon-Oxide-Nitride-Oxide-Silicon Electrically Erasable Programmable Read-only Memory Device Approach for Eliminating Off-Cell Leakage Current
Growth of ZnSe Epilayer on Si Using Ge/Ge_xSi_ Buffer Structure
Optimization of Short Channel Effect With Arsenic Halo Implant through Polysilicon Gate : Semiconductors
Shallow-Trench Isolation With Raised-Field-Oxide Structure
The Elimination of Inversion Domains in MBE-GaN Grown Using Low Temperature Nitridation
A Study on Bilateral Latch-Up Self-Triggering in Complementary Metal-Oxide-Semiconductor Protection Circuits
The Behavior of Bilateral Latch-Up Triggering in VLSI Electro Static Discharge Damage Protection Circuits
Charge Loss Due to AC Program Disturbance Stresses in EPROMs
Trarnsient and Steady State Carrier Transport under High Field Stressesin SONOS EEPROM Device
A method for suppressing deep-level emission in ZnSe/Ge/Ge_xSi_/Si structure
New Nanometer T-Gate Fabricated by Thermally Reflowed Resist Technique : Instrumentation, Measurement, and Fabrication Technology

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