REIF Rafael | Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology

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概要

• 同名の論文著者
• Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technologyの論文著者

関連著者

• Sze S‐m

  National Nano Device Lab. Hsinchu Twn

• Chang C‐y

  Department Of Electronics Engineering National Chiao Tung University

• Chang Chun-yen

  Institute Of Electronics National Chiao Tung University

• Chang Chun-yen

  Instiute Of Electronics National Chiao-tang University

• Chang Chun-yen

  Department Of The Electro-optical Engineering National Chiao Tung University

• SZE Simon

  National Nano Device Laboratory

• Sze S

  National Chiao‐tung Univ. Hsinchu Twn

• CHYAN Yih-Feng

  Institute of Electronics, National Chiao Tung University

• SZE Simon

  Institute of Electronics, National Chiao Tung University

• REIF Rafael

  Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology

• Sze Simon

  Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University:na

• Sze Simon-m.

  National Nano Device Laboratory

• Reif R

  Mit Ma Usa

• Chyan Yih-feng

  Institute Of Electronics National Chiao Tung University:(present Address)microelectronics And Inform

• Chang Chun-yen

  Institute Of Electronics National Chiao Tang University:national Nano-device Laboratories

• Chang C‐y

  Department Of Electronics Engineering Nation Chiao Tung University

• REIF Rafael

  Institute of Electronics, National Chiao Tung University

• LIAO Kenneth

  Institute of Electronics, National Chiao Tung University

• Liao Kenneth

  Institute Of Electronics National Chiao Tung University

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著作論文

• Temperature Influence on the Generalized Einstein Relation for Degenerate Semiconductors with Arbitrary Band Structures
• Effect of Interfacial Oxide on Static and High-Frequency Performance in Poly-Emitter Bipolar Transistors Under High-Level Injection
• Effect of Ge Concentration on Static and Microwave Performances in Ge_xSi_ Heterojunction Bipolar Transistors under High-Level Injection

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