Huang Tiao-yuan | Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University

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概要

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著作論文

A New Method to Extract MOSFET Threshold Voltage, Effective Channel Length, and Channel Mobility Using S-parameter Measurement(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millim
Characteristics of Poly-Si Nanowire Thin Film Transistors with Double-Gated Structures
The Effects of Shallow Germanium Halo Doping on N-Channel Metal Oxide Semiconductor Field Effect Transistors
A Radiation-Hard Flash Cell Using Horn-Shaped Floating Gate and N_2O Annealing
A Study on the Radiation Hardness of Flash Cell with Horn-Shaped Floating-Gate
Effects of Floating-Gate Doping Concentration of Flash Cell Performance
Comparison of N_2 and NH_3 Plasma Passivation Effects on Polycrystalline Silicon Thin-Film Transistors
Devices Characteristics and Aggravated Negative Bias Temperature Instability in PMOSFETs with Uniaxial Compressive Strain
Investigations of an Independent Double-Gated Polycrystalline Silicon Nanowire Thin Film Transistor for Nonvolatile Memory Operations
Hot Carrier Degradations of Dynamic Threshold Silicon on Insulator p-Type Metal–Oxide–Semiconductor Field Effect Transistors
The Effects of Dielectric Type and Thickness on the Characteristics of Dynamic Threshold Metal Oxide Semiconductor Transistors
Impacts of Low-Pressure Chemical Vapor Deposition-SiN Capping Layer and Lateral Distribution of Interface Traps on Hot-Carrier Stress of n-Channel Metal–Oxide–Semiconductor Field-Effect-Transistors
Analytical Model of Subthreshold Current and Threshold Voltage for Fully Depleted Double-Gated Junctionless Transistor
Performance Improvement of Polycrystalline Silicon Nanowire Thin-Film Transistors by a High-$k$ Capping Layer
Crystal Orientation and Nitrogen Effects on the Carrier Mobility of p-Type Metal Oxide Semiconductor Field Effect Transistor with Ultra Thin Gate Dielectrics
Device Characteristics and Aggravated Negative Bias Temperature Instability in $ p$-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Uniaxial Compressive Strain
A New Methodology for Probing the Electrical Properties of Heavily Phosphorous-Doped Polycrystalline Silicon Nanowires

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