Investigations of an Independent Double-Gated Polycrystalline Silicon Nanowire Thin Film Transistor for Nonvolatile Memory Operations

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概要

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• In this study, we investigate the merits of an independent double-gated configuration for nonvolatile memory operations. In contrast to the convention where the programming/erasing gate also acts as the read gate, a dedicated read gate with an oxide-only dielectric is proposed in the new mode. Using the same device under identical programming/erasing conditions, greatly improved programming speed (e.g., 61% increase under the stress condition of 18 V for 10 μs) is achieved, while the erasing speed, albeit initially retarded, shows enhancement when the erasing time is larger than a certain value, which can be explained by the back-gate bias effects. Retention characterization indicates that the new mode offers a larger memory window after 10 year extrapolation. In addition, a proper auxiliary gate bias applied during programming/erasing processes is found to improve the programming/erasing speed. Finally, by taking advantage of the separate-gated feature, two independent storage sites can be obtained by employing an oxide--nitride--oxide layer as the dielectric for both gates, thus realizing 2-bit/cell functionality.

• 2011-08-25

著者

• Huang Tiao-yuan

  Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University

• Lin Horng-chih

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Chen Wei-chen

  Department Of Chemistry National Tsing Hua University

• Huang Tiao-Yuan

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C.

• Chen Wei-Chen

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C.

• Lin Horng-Chih

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C.

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