Chen Kun‐ming | National Nano Device Laboratories

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著作論文

A New Method to Extract MOSFET Threshold Voltage, Effective Channel Length, and Channel Mobility Using S-parameter Measurement(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millim
Analysis of Temperature Effects on the High-Frequency Characteristics of RF LDMOS Transistors
Characterization of RF LDMOS Transistors with Different Layout Structures
Degradation of Low-Frequency Noise in PD SOI MOSFETs after Hot-Carrier Stress
Noise Parameters Computation of Microwave Devices Using Genetic Algorithms(Active Circuits & Antenna, Recent Technologies of Microwave and Millimeter-Wave Devices Focusing on Miniaturization and Advancement in Performance with Their Appli
A Novel Approach for Parameter Determination of HBT Small-Signal Equivalent Circuit(Model, Analog Circuit and Device Technologies)
CMOS RFIC : Application to Wireless Transceiver Design (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
P-Channel Metal Oxide Semiconductor Field Effect Transistors with Polycrystalline-Si_Ge_x Gate Grown by Ultra-High Vacuum Chemical Vapor Deposition System
A Cascade Open-Short-Thru (COST) De-Embedding Method for Microwave On-Wafer Characterization and Automatic Measurement(Microelectronic Test Structures)

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