Analytical Model of Subthreshold Current and Threshold Voltage for Fully Depleted Double-Gated Junctionless Transistor

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概要

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• In this study, we derive an analytical model of an electric potential of a double-gated (DG) fully depleted (FD) junctionless (J-less) transistor by solving the two-dimensional Poisson's equation. On the basis of this two-dimensional electric potential model, subthreshold current and swing can be calculated. Threshold voltage roll-off can also be estimated with analytical forms derived using the above model. The calculated results of electric potential, subthreshold current and threshold voltage roll-off are all in good agreement with the results of technology computer aided design (TCAD) simulation. The model proposed in this paper may help in the development of a compact model for simulation program with integrated circuit emphasis (SPICE) simulation and in providing deeper insights into the characteristics of short-channel J-less transistors.

• 2012-02-25

著者

• Huang Tiao-yuan

  Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University

• Lin Horng-chih

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Lin Zer-Ming

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan

• Liu Keng-Ming

  Department of Electrical Engineering, National Dong Hwa University, Hualien 974-01, Taiwan

• Lin Horng-Chih

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan

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