Hot Carrier Degradations of Dynamic Threshold Silicon on Insulator p-Type Metal–Oxide–Semiconductor Field Effect Transistors

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概要

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• In this study, we compared the hot carrier effects of T-gate and H-gate Silicon on Insulator p-Type Metal–Oxide–Semiconductor Field Effect Transistors (SOI pMOSFETs) operating under dynamic threshold mode (DT-mode) and normal mode at various temperatures. By operating under DT-mode, the threshold voltage shift is reduced. However, enhanced degradations in maximum transconductance and drive current are observed when operating under DT-mode at room temperature, especially for the T-gate structure. The transconductance enlargement effect for devices operating under DT-mode, together with the non-uniform potential distribution in T-gate structure, are believed to be responsible for the observed enhanced degradations. At elevated temperatures, the hot-carrier-induced degradations are alleviated for devices operating under DT-mode, to levels close to those of the normal mode, due to reduced impact ionization at higher temperature.

• 2004-04-15

著者

• Huang Chun-yang

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Li Yiming

  National Chiao Tung Univ. Hsinchu Twn

• Lee Yao-jen

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Huang Tiao-yuan

  Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University

• Chao Tien-sheng

  Department Of Electrophysics National Chiao Tung University

• Lin Horng-chih

  National Chiao Tung University

• Huang Chun-Yang

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan

• Li Yiming

  National Nano Device Labs., Hsinchu, Taiwan

• Lin Horng-Chih

  National Nano Device Labs., Hsinchu, Taiwan

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