Geometric Variations and Magnetic Field Effects on Electron Energy States of InAs/GaAs Quantum Rings

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概要

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• We study electron energy states in three-dimensional (3D) narrow-gap semiconductor quantum rings with ellipsoidal-shape torus (EST) and cut-bottom EST (CBEST) under an applied magnetic field. Our model includes the effective one-electronic-band Hamiltonian, the energy- and position-dependent electron effective mass approximation, and the Ben Daniel-Duke boundary condition. It is solved by the nonlinear iterative method to obtain a “self-consistent” solution numerically. The electron energy dependence on the inner radius, height, and lateral width is investigated for InAs/GaAs quantum rings with EST and CBEST shapes. The height and lateral width play a crucial role in varying the energy spectra of the rings. When the magnetic field is applied on a fixed-size CBEST ring, we find that there is a nonperiodical transition among the lowest electron energy states. Compared with the well-known 1D Aharonov-Bohm periodical oscillation, the electron energy levels increase and oscillate nonperiodically when the magnetic field is increased. Our calculation for single-electron magnetization shows that the magnetization is nonperiodical and is a negative function of magnetic field.

• 2003-04-15

著者

• Lu Hsiao-mei

  Department Of Bioengineering University Of Illinois

• Li Yiming

  National Chiao Tung Univ. Hsinchu Twn

• Lu Hsiao-Mei

  Department of Bioengineering, University of Illinois at Chicago, Chicago, IL 60612, USA

関連論文

• An Investigation of Magnetic Field Effects on Energy States for Nanoscale InAs/GaAs Quantum Rings and Dots(the IEEE International Conference on SISPAD '02)
• Electron Transition Energy for Vertically Coupled InAs/GaAs Semiconductor Quantum Dots and Rings
• Optimization of the Anti-Punch-Through Implant for Electrostatic Discharge Protection Circuit Design
• Effect of Shape and Size on Electron Transition Energies of InAs Semiconductor Quantum Dots
• Hot Carrier Degradations of Dynamic Threshold Silicon on Insulator p-Type Metal–Oxide–Semiconductor Field Effect Transistors
• Electron Transition Energy for Vertically Coupled InAs/GaAs Semiconductor Quantum Dots and Rings
• Geometric Variations and Magnetic Field Effects on Electron Energy States of InAs/GaAs Quantum Rings
• A Genetic Algorithm Approach to InGaP/GaAs HBT Parameter Extraction and RF Characterization

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