Local Strained Channel nMOSFETs by Different Poly-Si Gate and SiN Capping Layer Thicknesses : Mobility, Simulation, Size Dependence, and Hot Carrier Stress
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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LEE Yao-Jen
National Nano Device Laboratories
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CHUU D.
Department of Electrophysics, National Chiao Tung University
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CHAO Tien-Sheng
Department of Electrophysics, National Chiao Tung University
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Chao Tien-sheng
Department Of Electrophysics National Chiao Tung University
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FAN Chia-Hao
Department of Electronic Engineering, Feng Chia University
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LIN Wen-Yan
Department of Electronic Engineering, National Yunlin University of Science and Technology
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WAN Chia-Chen
Department of Electrophysics, National Chiao Tung University
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HUANG Bohr-Ran
Department of Electronic Engineering, National Yunlin University of Science and Technology Tung
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YANG Wen-Luh
Department of Electronic Engineering, Feng Chia University
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Lin Wen-yan
Department Of Electronic Engineering National Yunlin University Of Science And Technology
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Chuu D.
Department Of Electrophysics National Chiao Tung University
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Fan Chia-hao
Department Of Electronic Engineering Feng Chia University
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Yang Wen-luh
Department Of Electronic Engineering Feng Chia University
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Wan Chia-chen
Department Of Electrophysics National Chiao Tung University
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Huang Bohr-ran
Department Of Electronic Engineering National Yunlin University Of Science And Technology Tung
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Huang Bohr-ran
Department Of Electronic Engineering National Yunlin University Of Science And Technology
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