Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-03-15

著者

• CHANG Chun-Yen

  Department of Electronics Engineering, National Chiao Tung University

• Wu Shien-Yang

  Taiwan Semiconductor Manufacturuing Company

• CHAO Tien-Sheng

  Department of Electrophysics, National Chiao Tung University

• Chang C‐y

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Chang S‐j

  Department Of Electrical Engineering National Cheng-kung University

• Lin Chih-yung

  Taiwan Semiconductor Manufacturing Company

• LO Wen-Cheng

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• CHANG Sun-Jay

  Taiwan Semiconductor Manufacturing Company

• CHIANG Mu-Chi

  Taiwan Semiconductor Manufacturing Company

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