GaN-Based Light Emitting Diodes with Si-Doped In_<0.23>Ga_<0.77>N/GaN Short Period Superlattice Current Spreading Layer
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-30
著者
-
Su Y‐k
National Cheng Kung Univ. Tainan Twn
-
CHANG Shoou-Jinn
Institute of Electro-Optical Science and Engineering, Center for Micro/Nano Science and Technology,
-
Tsai Ji-ming
South Epitaxy Corporation
-
SU Yan-Kuin
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
-
KUO Cheng-Huang
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
-
CHEN Jone
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung Universi
-
Wu Liang-wen
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
-
Sheu J‐k
Institute Of Optical Sciences National Central University
-
SHEU Jinn-Kong
Optical Science Center, National Central University
-
Chang S‐j
Department Of Electrical Engineering National Cheng-kung University
-
Su Y‐k
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
関連論文
- Two-Step Etching Mechanism of Ag-Si Nanostructure with Various Ag Nanoshape Depositions
- High Brightness InGaN/GaN LEDs with ESD Protection
- Nitride based Power Chip with Indium-Tin-Oxide p-Contact and Al Back-Side Reflector
- High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO_2 Layer
- High Temperature and Low Frequency Noise of AlGaN/GaN/AlGaN Double Heterostructure MOS-HFETs with Photo-Chemical Vapor Deposition SiO_2 Layer
- InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO_2 Layers
- InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts
- Transparent TiN Electrodes in GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors(Semiconductors)
- P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy
- On the Carrier Concentration and Hall Mobility in GaN Epilayers : Semiconductors
- Improved Stopband of the Dual-Mode Ring Bandpass Filter Using Periodic Complementary Spilt-Ring Resonators(Microwaves, Millimeter-Waves)
- Spurious Suppression of a Parallel Coupled Microstrip Bandpass Filter with Simple Ring EBG Cells on the Middle Layer(Microwaves, Millimeter-Waves)
- Electron Field Emission Characteristics of Planar Field Emission Array with Diamondlike Carbon Electron Emitters
- Interface Modification in Organic Thin Film Transistors
- Anomalous Hot-Carrier-Induced On-Resistance Degradation in High-Voltage LDMOS Transistors
- Mechanism and Reliability Index of Hot-Carrier Degradation in LDMOS Transistors
- Hot-Carrier Reliability Improvement in Submicron High-Voltage DMOS Transistors
- Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
- Simulation and Fabrication of InGaP/Al_Ga_As/GaAs Oxide-Confined
- InGaN/GaN Light Emitting Diodes with a Lateral Current Blocking Structure
- Improvement of AlGaInP Multiple-Quantum-Well Light-Emitting Diodes by Modification of Ohmic Contact Layer
- AlGaInP Light Emitting Diode with a Modulation-Doped Superlattice
- Temperature Dependence of Barrier Height and Energy Bandgap in Au/n-GaSb Schottky Diode
- SiO_2/InP Structure Prepared by Direct Photo-Chemical Vapor Deposition Using Deuterium Lamp and Its Applications to Metal-Oxide-Semiconductor Field-Effect Transistor
- Low Temperature Metal Induced Crystallization of Amorphous Silicon by Nano-Gold-Particles
- AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer
- Gratings in GaN Membranes
- Gallium Nitride Diffractive Microlenses Using in Ultraviolet Micro-Optics System
- n-UV+BLUE/Green/Red White Light Emitting Diode Lamps
- GaN-Based Light Emitting Diodes with Si-Doped In_Ga_N/GaN Short Period Superlattice Current Spreading Layer
- AlGaInP/GaP Light-Emitting Diodes Fabricated by Wafer Direct Bonding Technology
- Effect of Mobility Degradation and Supply Voltage on NBTI Induced Drain Current Degradation
- Enhancement of Electron Emission Characteristics of Platform-shaped Mo Emitters by Diamond-like Carbon Coatings
- Noise Analysis of Nitride-based MOS-HFETs with Photo-chemical Vapor Deposition SiO_2 Gate Oxide in the Linear and Saturation Region
- Homoepitaxial ZnSe MIS Photodetectors Using SiO_2 and BST Insulator
- The annealing effects of GaN MIS capacitors with photo-CVD oxide layers
- Improved Performance of 2, 3-Dibutoxy-1, 4-Phenylene Vinylene Based Polymer Light-Emitting Diodes by Thermal Annealing
- InGaN Metal-Semiconductor-Metal Photodiodes with Nanostructures
- High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors
- ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes : Semiconductors
- Effects of Redox Treatment on Diamondlike Carbon Coated Mo Substrates
- Improved performance of DB-PPV based Polymer Light Emitting Diodes by Thermal Annealing
- Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
- GaInNAs/GaAs p-i-n Photodetector with Multiquantum Well Structure
- Effect of Compositions and Surface Treatment on the Jetting Stability and Color Uniformity of Ink-Jet Printed Color Filter
- Influence of UV-Curable Compositions and Rib Properties on Ink-Jet-Type Color Filter Performance
- AlGaN Ultraviolet Metal-Semiconductor-Metal Photodetectors with Low-Temperature-Grown Cap Layers
- Deposition of SiO_2 Films on Strained SiGe Layer by Direct Photo Chemical Vapor Deposition
- Effects of Interfacial Oxide Layer for the Ta_2O_5 Capacitor After High-Temperature Annealing
- Practical Passive Filter Synthesis Using Genetic Programming(CAD, Analog Circuit and Device Technologies)
- Performance Improvement of InGaAsN/GaAs Quantum Well Lasers by Using Trimethylantimony Preflow
- Bistable Resistive Switching Characteristics of Poly(2-hydroxyethyl methacrylate) Thin Film Memory Devices
- n-UV+Blue/Green/Red White Light Emitting Diode Lamps
- High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO2 Layer
- Emission Mechanism of Mixed-Color InGaN/GaN Multi-Quantum-Well Light-Emitting Diodes
- GaN-Based Light Emitting Diodes with Si-Doped In0.23Ga0.77N/GaN Short Period Superlattice Current Spreading Layer