Nitride based Power Chip with Indium-Tin-Oxide p-Contact and Al Back-Side Reflector

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-30

著者

• Chang C‐s

  Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers

• Su Y‐k

  National Cheng Kung Univ. Tainan Twn

• CHANG Shoou-Jinn

  Institute of Electro-Optical Science and Engineering, Center for Micro/Nano Science and Technology,

• Lo Hsin-ming

  Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers

• SHEI Shih-Chang

  South Epitaxy Corporation

• CHANG Chia-Sheng

  Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University

• SU Yan-Kuin

  Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University

• CHEN Wei-Shou

  Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University

• SHEN Chien-Fu

  Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University

• LO Hsin-Ming

  South Epitaxy Corporation

• Chiang C‐i

  Materials R&d Center Chung Shan Inst. Sci. & Technol. Taoyuan Twn

• Chang S‐j

  Department Of Electrical Engineering National Cheng-kung University

• Chen Wei-shou

  Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers

• Shen Chien-fu

  Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers

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