Enhancement of Electron Emission Characteristics of Platform-shaped Mo Emitters by Diamond-like Carbon Coatings

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-06-15

著者

• Wang Wen-chun

  Novel Display Technology Development Division

• Wang Wen-chun

  Electronic Research & Service Organization

• Chuang F‐y

  Novel Display Technology Development Division

• Yokoyama Meiso

  Department of Electrical Engineering, National Cheng Kung University

• LIN Chin-Maw

  Department of Electrical Engineering, National Cheng Kung University

• CHANG Shoou-Jinn

  Department of Electrical Engineering, National Cheng Kung University

• CHUANG Feng-Yu

  Electronic Research & Service Organization, ITRI

• TSAI Chun-Hui

  Electronic Research & Service Organization, ITRI

• Chang S‐j

  Department Of Electrical Engineering National Cheng-kung University

• Lin C‐m

  Taiwan Semiconductor Manufacturing Co. Ltd. Hsin‐chu Twn

• Yokoyama M

  Kawasaki Heavy Ind. Ltd. Chiba Jpn

• Yokoyama Meiso

  Department Of Electrical Engineering National Cheng Kung University

• FIN I-Nan

  Materials Science Center, National Tsing Hua University

• Chang Shoou-jinn

  Department Of Electrical Engineering National Cheng Kung University

• Fin I-nan

  Materials Science Center National Tsing Hua University

関連論文

• High Brightness InGaN/GaN LEDs with ESD Protection
• Nitride based Power Chip with Indium-Tin-Oxide p-Contact and Al Back-Side Reflector
• High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO_2 Layer
• High Temperature and Low Frequency Noise of AlGaN/GaN/AlGaN Double Heterostructure MOS-HFETs with Photo-Chemical Vapor Deposition SiO_2 Layer
• InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO_2 Layers
• InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts
• Transparent TiN Electrodes in GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors(Semiconductors)
• P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy
• On the Carrier Concentration and Hall Mobility in GaN Epilayers : Semiconductors
• The Effect of Li, Cu and Zn Doping on the Luminance and Conductivity of Blue ZnGa_2O_4 Phosphor
• Improvement of Cathodoluminescence for ZnGa_2O_4 Phosphor by Second Fired Process
• 以固態燒結法研製場放射顯示器之ZnGa_2O_4螢光粉
• Free Electron Laser Oscillation down to the Deep UV Range Using a Small-Scale Storage Ring
• Lasing at 352 nm of the NIJI-IV Storage-Ring Free-Electron Laser
• Electron Field Emission Characteristics of Planar Field Emission Array with Diamondlike Carbon Electron Emitters
• Electron Emission Characteristics of Diamond-like Films Synthesized by Pulsed Laser Deposition Technique
• Electron Emission Characteristics of Diamond-like Films Synthesized by Pulsed Laser Deposition Technique
• Photoreflectance Study of InP and GaAs by Metal Organic Chemical Vapor Deposition Using Tertiarybutylphosphine and Tertiarybutylarsine Sources
• Simulation Study of Reflective-Type Carbon Nanotube Field Emission Display
• A High-Luminance Display Device Using Carbon Nanotube Field Emitters (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
• Improvement of Uniformity in Active-Matrix Light-Emitting Diodes (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
• A High-Luminance Display Device Using Carbon Nanotube Field Emitters
• Improvement of uniformity in active-matrix light-emitting diodes
• Direct Oxidation of Si_Ge_x Layers Using Vacuum-Ultra-Violet Light Radiation in Oxygen
• SiO_2/InP Structure Prepared by Direct Photo-Chemical Vapor Deposition Using Deuterium Lamp and Its Applications to Metal-Oxide-Semiconductor Field-Effect Transistor
• A High-Efficiency CMOS Class-B Push-Pull Power Amplifier for Code-Division-Multiple-Access Cellular System
• Crystallographic Structures and Parasitic Resistances of Self-Aligned Silicide TiSi_2/Self-Aligned Nitrided Barrier Layer/Selective Chemical Vapor Deposited Aluminum in Fully Self-Aligned Metallization Metal Oxide Semiconductor Field-Effect Transistor
• Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization Metal-Oxide-Semiconductor Field-Effect-Transistor
• Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization MOSFET
• Reactive Ion Etching of ZnS Films using a Gas Mixture of Methane/Hydrogen/Argon
• A 10-in. Diagonal ZnS:Mn TFEL Panel Fabricated by a Sequential Vacuum Deposition Apparatus
• Characteristics of Indium-Tin Oxide Thin Film Etched by Reactive Ion Etching
• ZnS Thin Films Prepared by Low-Pressure Metalorganic Chemical Vapor Deposition
• AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer
• n-UV+BLUE/Green/Red White Light Emitting Diode Lamps
• GaN-Based Light Emitting Diodes with Si-Doped In_Ga_N/GaN Short Period Superlattice Current Spreading Layer
• AlGaInP/GaP Light-Emitting Diodes Fabricated by Wafer Direct Bonding Technology
• Optical and Electrical Characteristics of CO_2-Laser-Treated Mg-Doped GaN Film
• Electrical Properties of Multiple High-Dose Si Implantation in p-GaN
• Epitaxial Growth of the GaN Film by Remote-Plasma Metalorganic Chemical Vapor Deposition
• Multi-Color Panel Based on a White Organic Light Emitting Diode with Color Filter
• High Efficiency White Organic Light-Emitting Diodes with Double-Doped in a Single Emissive Layer
• Deep Traps and Mechanism of Brightness Degradation in Mn-doped ZnS Thin-Film Electroluminescent Devices Grown by Metal-Organic Chemical Vapor Deposition
• The Improvement of Luminance Efficiency by the Insertion of Buffer layers in Flexible Organic Light-Emitting Diodes
• The Study of Organic Light Emitting Diode with a Doped Electron Transport Layer
• Reduction of Ohmic Contact Resistance on n-GaN by Surface Treatment Using Cl_2 Inductively Coupled Plasma Following Laser Lift-Off
• Electric Field Effect on ZnSe Thin Films Prepared by Metalorganic Chemical Vapor Deposition
• Current Density-Voltage Characteristics of AC Thin-Film Electroluminescent Devices with Different Dielectric-Phosphor Interfaces
• Effects of Insulating Layers and Active Layer on ZnS:Tb, F Thin-Film Electroluminescent Devices
• Effects of [H_2S]/[DMZn] Molar Ratio on ZnS Films Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• High Dielectric Constant of RF-Sputtered HfO_2 Thin Films
• Enhancement of Electron Emission Characteristics of Platform-shaped Mo Emitters by Diamond-like Carbon Coatings
• Noise Analysis of Nitride-based MOS-HFETs with Photo-chemical Vapor Deposition SiO_2 Gate Oxide in the Linear and Saturation Region
• Homoepitaxial ZnSe MIS Photodetectors Using SiO_2 and BST Insulator
• The annealing effects of GaN MIS capacitors with photo-CVD oxide layers
• Improved Performance of 2, 3-Dibutoxy-1, 4-Phenylene Vinylene Based Polymer Light-Emitting Diodes by Thermal Annealing
• InGaN Metal-Semiconductor-Metal Photodiodes with Nanostructures
• High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors
• ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes : Semiconductors
• Effects of Redox Treatment on Diamondlike Carbon Coated Mo Substrates
• Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
• Effect of Compositions and Surface Treatment on the Jetting Stability and Color Uniformity of Ink-Jet Printed Color Filter
• Influence of UV-Curable Compositions and Rib Properties on Ink-Jet-Type Color Filter Performance
• Improved light output and electrical performance of InGaN/GaN light-emitting diode by surface texturing of the n-type GaN
• 以連續性真空蒸鍍系統研製對角線十英吋ZnS:Mn 薄膜電激發光顯示屏
• Improved Optical Transmittance and Crystal Characteristics of ZnS:TbOF Thin Film on Bi_4Ti_3O_/Indium Tin Oxide/Glass Substrate by Using a SiO_2 Buffer Layer
• Evaluation of LaB_6 Thin Film as Low-Work-Function Gate for MOSFET Operated at Low Temperature
• Ultraviolet-Patternable Polymer Insulator for Organic Thin-Film Transistors on Flexible Substrates
• Deposition of SiO_2 Films on Strained SiGe Layer by Direct Photo Chemical Vapor Deposition
• Highly Efficient White Organic Light-Emitting Diodes with a p--i--n Tandem Structure
• AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field-Effect Transistor Based on a Liquid Phase Deposited Oxide : Semiconductors
• Electrical Properties of High-Quality Stacked CdTe/Photo-Enhanced Native Oxide for HgCdTe Passivation
• Effect of Atomic Layer Epitaxy Growth Conditions on the Properties of ZnS Epilayers on (100)-Si Substrate
• Novel Field Emission Organic Light Emitting Diodes
• 650 nm AlGaInP/GaInP Compressively Strained Multi-Quantum Well Light Emitting Diodes
• Effects of Photoinitiator on the Properties of Polymer Ball Type Polymer Dispersed Liquid Crystal Films
• Low-Temperature Metal-Oxide-Semiconductor Field-Effect Transistor Operation by Temperature Scaling Theory
• Improved Optical Transmittance and Crystal Characteristics of ZnS:TbOF Thin Film on Bi4Ti3O12/Indium Tin Oxide/Glass Substrate by Using a SiO2 Buffer Layer
• Enhancing P-type Conductivity in Mg-doped GaN Using Oxygen and Nitrogen Plasma Activation
• Effects of Matrix Impedance on the Properties of Polymer Dispersed Liquid Crystal Cells
• Atomic Layer Epitaxy of ZnS by Low-Pressure Horizontal Metalorganic Chemical Vapor Deposition
• Preparation of CuES-Coated ZnS:Ag, Cl Phosphor Film with In_2O_3 Coprecipitation
• Electron Emission Behaviors of Polycrystalline-Diamond-Coated Silicon Emitters
• Increasing the Contrast Ratio of Organic Light-Emitting Diode by Organic–Metal Light-Absorbing Layer in Black Cathode
• Atomic Layer Epitaxial Growth of ZnS_xSe_1-x on Si Substrate
• Simulation Study of Reflective-Type Carbon Nanotube Field Emission Display
• Application of Inorganic/Organic Stacked Hole Transporting Layer in Organic Solar Cells
• Enhancing the Performance of Pentacene-Based Organic Thin Film Transistors by Inserting Stacked N,N\aku '-Diphenyl-N,N\aku '-bis(1-naphthyl-phenyl)-(1,1'-biphenyl)-4,4'-diamine and Tris(8-hydroxyquinolino)-aluminum Buffer Layers
• Heterostructure Fe:InP/InGaAs Metal-Semiconductor Field-Effect Transistors Grown by Metalorganic Chemical Vapor Deposition
• Improvement in Luminance Efficiency by Insertion of Buffer Layers in Flexible Organic Light-Emitting Diodes
• Electrical Properties of High-Quality Stacked CdTe/Photo-Enhanced Native Oxide for HgCdTe Passivation
• Reduction of Ohmic Contact Resistance on $n$-GaN by Surface Treatment Using Cl2 Inductively Coupled Plasma Following Laser Lift-Off
• Enhancing Efficiency of Organic Light-Emitting Diodes Using Lithium-Doped Electron Transport Layer
• Transparent Organic Thin Film Transistors Using an Oxide/Metal/Oxide Trilayer as Low-Resistance Transparent Source/Drain Electrodes
• Optical Transitions in a Self-Assembled Ge Quantum Dot/Si Superlattice Measured by Photoreflectance Spectroscopy
• Feasibility of Fabricating a Modified Volcano-Shaped Field Emitter
• Atomic Layer Epitaxy of ZnS by Low-Pressure Horizontal Metalorganic Chemical Vapor Deposition

もっと見る 閉じる

スポンサーリンク