AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field-Effect Transistor Based on a Liquid Phase Deposited Oxide : Semiconductors
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概要
- 論文の詳細を見る
AlGaN/GaN metal oxide semiconductor heterostructure field-effect transistors (MOSHFETs) with liquid phase deposited SiO_2 as the insulating gate are demonstrated. A very large gate swing voltage is applied. An AlGaN/GaN MOS heterostructure FET with saturation characteristics is observed. For a gate length of 2μm in a 5 μm channel opening with a gate width of 100μm, MOSHFET with transconductance and maximum drain current of 78mS/mm and 720mA/mm, respectively, is achieved.
- 社団法人応用物理学会の論文
- 2002-07-01
著者
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Su Yan-kuin
Department Of Electrical Engineering National Cheng-kung University
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Su Yan-kuin
Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit
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CHANG Shoou-Jinn
Department of Electrical Engineering, National Cheng Kung University
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Lee Kuan-wei
Department Of Electrical Engineering National Cheng-kung University
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Wang Y‐h
National Cheng‐kung Univ. Tainan Twn
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Chang Shoou-jinn
Department Of Electrical Engineering National Cheng-kung University
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WANG Yeong-Her
Department of Electrical Engineering, National Cheng Kung University
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Wang Yeong-her
Department Of Electrical Engineering National Cheng Kung University
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Chang Shoou-jinn
Department Of Electrical Engineering National Cheng Kung University
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CHOU Dei-Wei
Department of Electrical Engineering, National Cheng-Kung University
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HANG Jian-Jun
Department of Electrical Engineering, National Cheng-Kung University
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WU Hou-Run
Department of Electrical Engineering, National Cheng-Kung University
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HONG Mau-Phon
Department of Electrical Engineering, National Cheng-Kung University
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Wu Hou-run
Department Of Electrical Engineering National Cheng-kung University
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Chou Dei-wei
Department Of Electrical Engineering National Cheng-kung University
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Hang Jian-jun
Department Of Electrical Engineering National Cheng-kung University
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Hong Mau-phon
Department Of Electrical Engineering National Cheng-kung University
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Huang Jian-Jun
Department of Electrical Engineering, National Cheng-Kung University
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