Surface Oxidation Kinetics of GaAs Oxide Growth by Liquid Phase Chemical-Enhanced Technique
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概要
- 論文の詳細を見る
The initial stage of GaAs oxidation by a near-room-temperature liquid phase chemical-enhanced technique has been studied. Based on the experimental results of X-ray photoelectron spectroscopy, a complete model illustrating the chemical composition of the grown oxide film has been established. To clarify the kinetics of oxide growth in a liquid solution in more detail, we have also performed selective oxidation and surface profile measurements. Unusual features of the oxide growth kinetics have been observed by investigating the physical structure of oxide at the edge of mask in the selective oxidation.
- 社団法人応用物理学会の論文
- 2000-07-30
著者
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Wang Y‐h
National Cheng‐kung Univ. Tainan Twn
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WANG Yeong-Her
Department of Electrical Engineering, National Cheng Kung University
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Wang Yeong-her
Department Of Electrical Engineering National Cheng Kung University
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Houng M‐p
National Cheng‐kung Univ. Tainan Twn
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HOUNG Mau-Phon
Department of Electrical Engineering, National Cheng-Kung University
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Houng Mau-phon
Department Of Electrical Engineering National Cheng Kung University
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CHOU Dei-Wei
Department of Electrical Engineering, National Cheng-Kung University
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WANG Hwei-Heng
Department of Electrical Engineering, National Cheng-Kung University
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WU Jau-Yi
Department of Electrical Engineering, National Cheng-Kung University
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Wang Hwei-heng
Department Of Electrical Engineering National Cheng-kung University
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Wu Jau-yi
Department Of Electrical Engineering National Cheng-kung University
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Chou D‐w
National Cheng‐kung Univ. Tainan Twn
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Chou Dei-wei
Department Of Electrical Engineering National Cheng-kung University
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