Near-Room-Temperature Selective Oxidation on GaAs Using Photoresist as a Mask
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概要
- 論文の詳細を見る
Selective oxidation on GaAs operated at near room temperature, by a liquid phase chemically enhanced method using photoresist as a mask, is proposed and demonstrated. Because of the low temperature and electroless features of the oxidation method, the process is simple, economic and reliable. Good electrical insulating properties comparable with those of thermal oxide have been obtained. According to the results of X-ray photoelectron spectroscopy, the chemistry of the oxide surface is stable after thermal annealing. The thermal stability shows the potential for device fabrication.
- 社団法人応用物理学会の論文
- 1998-08-15
著者
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Wang Y‐h
National Cheng‐kung Univ. Tainan Twn
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WANG Yeong-Her
Department of Electrical Engineering, National Cheng Kung University
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Wang Yeong-her
Department Of Electrical Engineering National Cheng Kung University
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Houng M‐p
National Cheng‐kung Univ. Tainan Twn
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HOUNG Mau-Phon
Department of Electrical Engineering, National Cheng-Kung University
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Houng Mau-phon
Department Of Electrical Engineering National Cheng Kung University
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WANG Hwei-Heng
Department of Electrical Engineering, National Cheng-Kung University
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Wang Hwei-heng
Department Of Electrical Engineering National Cheng-kung University
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